P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. FEATURES • Very low threshold voltage • Fast swit

P-channel enhancement mode MOS transistor

FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making i

P-channel enhancement mode MOS transistor

P-channel vertical D-MOS logic level FET

20 V, P-channel Trench MOSFET

General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced

20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET

P-Channel Mosfet

PWM applications Load switch Power management

20 V, P-channel Trench MOSFET

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20 V, P-channel Trench MOSFET

105/205 In-Line Saddle Weld Diaphragm Seal

FEATURES „ 316L stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Weld-in design reduces the possibility of clogging „ Large 21/2˝ diaphragm compatible with most Ashcroft instrumentation

M12-A Female 90 Degree 5 Pin Field Attachable

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Direct replacement for T1 쩐 Midget Groove S5.7s

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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3 1/2 DIGIT MINI-SIZE PROCESS METER

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