N 沟道功率 MOSFET

OptiMOS ™ 5 60V 针对交换模式电源 (SMPS)中的同步整流进行了优化，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件是电机控制、太阳能微逆变器和快速开关 直流-直流转换器等广泛工业应用的绝佳选择。 • 针对同步整流进行优化\n• R DS(on) 比其他器件低 40%\n• 与同类器件相比，品质因数提高了 40%\n• 符合 RoHS - 无卤素\n• MSL1 评级\n\n优势:\n• 高系统效率\n• 减少并联\n• 增加功率密度\n• 降低系统成本\n• 非常低的电压过冲;

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

丝印代码：028N06SC；OptiMOSTM Power-Transistor, 60 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rated • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

OptiMOS ™ 5 60 V 功率 MOSFET 采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

\n优势:\nImproved heat dissipation\nSuperior thermal resistance\nDrop-in replacement in designs using SuperSO8 package\nLow conduction and switching losses;

OptiMOS ™ 5 功率 MOSFET 具有增强的温度额定值，可提高稳健性

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power • Low RDS(on) \n• Optimized for synchronous rectification\n• Enhanced 175°C capability in SuperSO8\n\n优势:\n• Longer life time\n• Highest efficiency and power density\n• Highest system reliability\n• Thermal robustness\n ;

OptiMOS??Power-Transistor

文件：421.68 Kbytes Page：10 Pages

丝印代码：028N06NS；OptiMOSTM Power-Transistor, 60 V

文件：1.12279 Mbytes Page：12 Pages

OptiMOSTM3 Power-Transistor

文件：567.65 Kbytes Page：9 Pages

OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS c