OptiMOS ™ 5 功率 MOSFET 具有增强的温度额定值，可提高稳健性

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power • Low RDS(on) \n• Optimized for synchronous rectification\n• Enhanced 175°C capability in SuperSO8\n\n优势:\n• Longer life time\n• Highest efficiency and power density\n• Highest system reliability\n• Thermal robustness\n ;

丝印代码：028N06NS；OptiMOSTM Power-Transistor, 60 V

文件：1.12279 Mbytes Page：12 Pages

丝印代码：028N06SC；OptiMOSTM Power-Transistor, 60 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rated • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

OptiMOSTM3 Power-Transistor

文件：567.65 Kbytes Page：9 Pages

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100 avalanche tested • Pb-free plating; RoHS c