BS10晶体管资料

  • BS10-01A...07A别名:BS10-01A...07A三极管、BS10-01A...07A晶体管、BS10-01A...07A晶体三极管

  • BS10-01A...07A生产厂家

  • BS10-01A...07A制作材料:Triac

  • BS10-01A...07A性质

  • BS10-01A...07A封装形式:特殊封装

  • BS10-01A...07A极限工作电压:700V

  • BS10-01A...07A最大电流允许值:10A

  • BS10-01A...07A最大工作频率:<1MHZ或未知

  • BS10-01A...07A引脚数:2

  • BS10-01A...07A最大耗散功率

  • BS10-01A...07A放大倍数

  • BS10-01A...07A图片代号:F-1

  • BS10-01A...07Avtest:700

  • BS10-01A...07Ahtest:999900

  • BS10-01A...07Aatest:10

  • BS10-01A...07Awtest:0

  • BS10-01A...07A代换 BS10-01A...07A用什么型号代替:TW10N...C,TW12N...C,TW18N...,TW25N...,

BS10价格

参考价格:¥0.9910

型号:BS107ARL1G 品牌:ON 备注:这里有BS10多少钱,2026年最近7天走势,今日出价,今日竞价,BS10批发/采购报价,BS10行情走势销售排行榜,BS10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BS10

NON-INSULATED BUTT SPLICE

文件:79.19 Kbytes Page:1 Pages

PANDUIT

丝印代码:BS107A;Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

ONSEMI

安森美半导体

100 Watt DC-DC Converters

Wide input voltage ranges from 8...385 V DC 1 or 2 isolated outputs up to 48 VDC 4 kV AC I/O electric strengh test voltage • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71°C with convection cooling

POWER-ONE

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

SIEMENS

西门子

N-Channel Enhancement-Mode MOS Transistors

TEMIC

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features • High Breakdown Voltage • High Input Impedance • Fast Switching Speed • Specially Suited for Telephone Subsets

DIODES

美台半导体

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

MOTOROLA

摩托罗拉

Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

ONSEMI

安森美半导体

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

PHILIPS

飞利浦

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts N.Channel TO.92

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

PHILIPS

飞利浦

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

MOTOROLA

摩托罗拉

Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts N.Channel TO.92

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 200 Volt VDS * RDS(on)=23Ω

ZETEX

Qualified to AEC-Q101 Standards for High Reliability

Features • BVDSS > 200V • RDS(ON) ≤ 23Ω @ VGS= 2.6V • ID = 120mA Maximum Continuous Drain Current • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

Features • BVDSS > 200V • RDS(ON) ≤ 23Ω @ VGS= 2.6V • ID = 120mA Maximum Continuous Drain Current • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 200 Volt VDS * RDS(on)=28Ω

ZETEX

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

ONSEMI

安森美半导体

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

MOTOROLA

摩托罗拉

DMOS Transistors (N-Channel)

FEATURES ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially sui

GE

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed

PHILIPS

飞利浦

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

ONSEMI

安森美半导体

My-Com precision switches

文件:85.41 Kbytes Page:1 Pages

IVO

堡盟电子

包装:散装 描述:STRAP BRAIDED BONDING 1HOLE 盒子,外壳,机架 机架配件

PANDUIT

包装:散装 描述:STRAP BRAIDED BONDING 1HOLE 盒子,外壳,机架 机架配件

PANDUIT

PHOTODIODE FOR VISIBLE LIGHT

SHARPSharp Corporation

夏普

PHOTODIODE FOR VISIBLE LIGHT

文件:79.09 Kbytes Page:2 Pages

SHARPSharp Corporation

夏普

Wide Wavelength Band Type Photodiode

文件:80.94 Kbytes Page:2 Pages

SHARPSharp Corporation

夏普

Wide Wavelength Band Type Photodiode

SHARPSharp Corporation

夏普

Thyristor Surge Suppresser

文件:280.46 Kbytes Page:5 Pages

BENCENT

槟城电子

10A/100V Trench Schottky Diode

BITEKBeyond Innovation Technology Co., Ltd.

硕颉科技硕颉科技股份有限公司

N-Channel 200-V (D-S) MOSFETs

文件:87.03 Kbytes Page:4 Pages

SYC

N-Channel 200-V (D-S) MOSFETs

文件:45.33 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:71.89 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:71.89 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:71.89 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:71.89 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:71.89 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:71.89 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:56.47 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

文件:71.89 Kbytes Page:4 Pages

ONSEMI

安森美半导体

BS10产品属性

  • 类型

    描述

  • 型号

    BS10

  • 功能描述

    LED Bar-Graph Display

更新时间:2026-3-12 18:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
POWER-ONE
25+
全新-电源模块
10238
POWER-ONE电源模块BS1001-7RVG交期短价格好#即刻询购立享优惠#长期有排单订
BITEK
21+
TO-263
60000
全新原装鄙视假货
ONSEMI/安森美
24+
明嘉莱只做原装正品现货
2510000
T092
ON(安森美)
23+
11856
公司只做原装正品,假一赔十
ON/安森美原装正品
26+
TO-92
16196
全新原装正品,价格优势,长期供应,量大可订
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
VISHAY
24+
TO-92
9750
绝对原装现货,价格低,欢迎询购!
ON/安森美
23+
TO-92
5500
主营品牌深圳百分百原装现货假一罚十绝对价优
达方
2019+
SMD
100000
原厂渠道 可含税出货
ON(安森美)
2511
4526
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价

BS10数据表相关新闻