丝印代码：12Y；bq500100 20-V, High-Side Current Sensor for Wireless Charging

1 Features • Wide Common-Mode Range: 0 V to 20 V • Offset Voltage: ±150 μV (Maximum) – Enables Shunt Drops of 10-mV Full-Scale • Accuracy: ±2% Gain Error (Maximum Overtemperature) • Fixed Gain: 50 V/V • Low Quiescent Current: 100 μA (Maximum) • Small Package: SC70 2 Applications •

High-Side Current Sensor for Wireless Charging

文件：332.41 Kbytes Page：18 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 功能：电流监控器 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：VOLTAGE OUTPUT CURRENT SHUNT MON 集成电路（IC） 电流调节/管理

丝印代码：12Y；bq500100 20-V, High-Side Current Sensor for Wireless Charging

1 Features • Wide Common-Mode Range: 0 V to 20 V • Offset Voltage: ±150 μV (Maximum) – Enables Shunt Drops of 10-mV Full-Scale • Accuracy: ±2% Gain Error (Maximum Overtemperature) • Fixed Gain: 50 V/V • Low Quiescent Current: 100 μA (Maximum) • Small Package: SC70 2 Applications •

High-Side Current Sensor for Wireless Charging

文件：332.41 Kbytes Page：18 Pages

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard ring protection ● 500 Amperes/ 80 to 100 Volts ● 175°C junction temperature ● Reverse energy tested ● ROHS Compliant

1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the the

Schottky PowerMod

文件：122.33 Kbytes Page：2 Pages

Schottky PowerMod

文件：122.33 Kbytes Page：2 Pages