VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 12 dB at 8.0 W/175 MHz • Omnigold™ Metalization System

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange enve

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal in

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

UHF power transistor

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange env

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 15 W/175 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 15 W/175 MHz • Omnigold™ Metalization System

VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated HF and VHF transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Features: It has a 3/8 f

VHF power transistor

N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES • internally matched input for wideband operation and high power gain; • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. FEATURES: • 28 V operation • PG = 10 dB at 175 W/108 MHz • Omnigold™ Metalization System • Diffused Ballast Resistors

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: BLV25 is a 28 V silicon NPN power transistor designed primarily for VHP FM broadcast transmitters. FEATURES: • 28 V operation • PG = 1.0 dB at 175 W/108 MHz • Omnigold™ Metalization System • Diffused Ballast Resistors

VHF power transistor

Description: N-P-N silicon planar epitaxial transistor primarily for use in VHF-FM broadcast transmitters. Features: * Ιnternally matched input for wideband operation and high power gain; * Multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; * Go

VHF power transistor

N-channel Enhancement Mode Power MOSFET

N-channel Enhancement Mode Power MOSFET

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BLV2N60

文件：68.8 Kbytes Page：2 Pages

N-channel Enhancement Mode Power MOSFET

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BLV2N60