BLV2N60

文件：68.8 Kbytes Page：2 Pages

N-channel Enhancement Mode Power MOSFET

文件：403.4 Kbytes Page：6 Pages

BLV2N60

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

TMOS POWER FET 2.0 AMPERES 600 VOLTS

文件：271.17 Kbytes Page：10 Pages