BLV20晶体管资料

  • BLV20别名:BLV20三极管、BLV20晶体管、BLV20晶体三极管

  • BLV20生产厂家

  • BLV20制作材料:Si-NPN

  • BLV20性质:甚高频 (VHF)_功率放大 (L)

  • BLV20封装形式:贴片封装

  • BLV20极限工作电压:65V

  • BLV20最大电流允许值:0.9A

  • BLV20最大工作频率:175MHZ

  • BLV20引脚数:4

  • BLV20最大耗散功率:8W

  • BLV20放大倍数

  • BLV20图片代号:G-266

  • BLV20vtest:65

  • BLV20htest:175000000

  • BLV20atest:0.9

  • BLV20wtest:8

  • BLV20代换 BLV20用什么型号代替

BLV20价格

参考价格:¥213.9291

型号:BLV20 品牌:ASI 备注:这里有BLV20多少钱,2026年最近7天走势,今日出价,今日竞价,BLV20批发/采购报价,BLV20行情走势销售排行榜,BLV20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BLV20

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange

PHILIPS

飞利浦

BLV20

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 12 dB at 8.0 W/175 MHz • Omnigold™ Metalization System

ASI

BLV20

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange enve

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV20

VHF power transistor

ETC

知名厂家

BLV20

NPN SILICON RF POWER TRANSISTOR

ETC

知名厂家

BLV20

VHF power transistor

ETC

知名厂家

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal in

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

PHILIPS

飞利浦

BLV20产品属性

  • 类型

    描述

  • 型号

    BLV20

  • 功能描述

    射频双极电源晶体管 RF Transistor

  • RoHS

  • 制造商

    M/A-COM Technology Solutions

  • 配置

    Single 直流集电极/Base Gain hfe

  • Min

    40

  • 最大工作频率

    30 MHz 集电极—发射极最大电压

  • VCEO

    25 V 发射极 - 基极电压

  • VEBO

    4 V

  • 集电极连续电流

    20 A

  • 功率耗散

    250 W

  • 封装/箱体

    Case 211-11

  • 封装

    Tray

更新时间:2026-3-16 20:00:00
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PHI
2026+
SMD
54648
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24+
MODL
20000
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00+
金属管
26
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PHI
23+
N/A
8560
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MOTOROLA/摩托罗拉
25+
TO-59r
1200
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22+
5000
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原厂
2023+
模块
600
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PHI
19+
SMD
20000
PHI
2540+
8595
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PHI
23+
MODULE
18721
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