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BLF5价格
参考价格：￥453.0629
型号：BLF571,112 品牌：NXP 备注：这里有BLF5多少钱，2025年最近7天走势，今日出价，今日竞价，BLF5批发/采购报价，BLF5行情走势销售排行榜，BLF5报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLF5 | Axial Lead and Cartridge Fuses - Midget 文件：78.82 Kbytes Page：1 Pages | Littelfuse 力特 |   | |
UHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. FEA | Philips 飞利浦 | | ||
UHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. FEA | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
UHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • H | Philips 飞利浦 | | ||
UHF POWER MOS TRANSISTOR DESCRIPTION: The ASI BLF522 is Designed for communications transmitter applications in the UHF frequency range. FEATURES: • Designed for broadband operation. • High power gain • Omnigold™ Metalization System | ASI | | ||
UHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • High | Philips 飞利浦 | | ||
UHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices a | Philips 飞利浦 | | ||
UHF power MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES • | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF push-pull power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the | Philips 飞利浦 | | ||
UHF push-pull power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the | Philips 飞利浦 | | ||
UHF push-pull power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the | Philips 飞利浦 | | ||
UHF push-pull power MOS transistor DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provi | Philips 飞利浦 | | ||
UHF push-pull power MOS transistor DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provid | Philips 飞利浦 | | ||
HF / VHF power LDMOS transistor General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Features ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: ◆ Average output power = 20 W ◆ Power gain = 27.5 dB | Philips 飞利浦 | | ||
HF / VHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
HF / VHF power LDMOS transistor General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Features Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: Average output power = 20 W Power gain = 27.5 dB Efficiency | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
HF / VHF power LDMOS transistor General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average out | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
HF / VHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
HF / VHF power LDMOS transistor General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average out | Ampleon 安谱隆 | | ||
HF / VHF power LDMOS transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
HF / VHF power LDMOS transistor General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: Average output power = 500 W | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Power LDMOS transistor General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Power LDMOS transistor General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Power LDMOS transistor General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Features and benefits Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 : Outp | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Power LDMOS transistor General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications withou | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Power LDMOS transistor General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications withou | Ampleon 安谱隆 | | ||
UHF power MOS transistor | ETC 知名厂家 | ETC | | |
UHF power MOS transistor 文件：77.96 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
UHF power MOS transistor 文件：77.96 Kbytes Page：14 Pages | JMNIC 锦美电子 | | ||
UHF power MOS transistor | ETC 知名厂家 | ETC | | |
UHF POWER MOS TRANSISTOR | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-171A 包装：托盘 描述：RF FET NCHA 65V 16DB SOT171A 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
UHF power MOS transistor 文件：86.21 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
UHF power MOS transistor 文件：86.21 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
封装/外壳：SOT-171A 包装：托盘 描述：RF FET NCHA 65V 7DB SOT171A 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
UHF power MOS transistor 文件：100.75 Kbytes Page：16 Pages | JMNIC 锦美电子 | | ||
UHF push-pull power MOS transistor 文件：78.67 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
UHF push-pull power MOS transistor 文件：116.6 Kbytes Page：15 Pages | Philips 飞利浦 | | ||
UHF push-pull power MOS transistor 文件：99.89 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
HF / VHF power LDMOS transistor 文件：113.06 Kbytes Page：13 Pages | Philips 飞利浦 | | ||
HF / VHF power LDMOS transistor 文件：362.62 Kbytes Page：16 Pages | Philips 飞利浦 | | ||
HF / VHF power LDMOS transistor 文件：171.17 Kbytes Page：18 Pages | Philips 飞利浦 | | ||
HF / VHF power LDMOS transistor 文件：179.61 Kbytes Page：18 Pages | Philips 飞利浦 | | ||
Power LDMOS transistor 文件：182.9 Kbytes Page：14 Pages | Philips 飞利浦 | |
BLF5产品属性
- 类型
描述
- 型号
BLF5
- 制造商
LITTELFUSE
- 制造商全称
Littelfuse
- 功能描述
Axial Lead and Cartridge Fuses - Midget
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
12+ |
TO-62 |
63 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PHI |
24+ |
345 |
现货供应 |
||||
恩XP |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
LEM |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
Ampleon(安谱隆) |
24+ |
N/A |
17048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
LEM |
25+23+ |
MODULE |
73308 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
PHL |
23+ |
140 |
|||||
AMPLEON |
2450+ |
SOT1214B |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
恩XP |
24+ |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
BLF5规格书下载地址
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BLF5数据表相关新闻
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优势渠道
2023-11-7BLED112-V1
类别 RF/IF 和 RFID 射频接收器、发射器、收发器成品 制造商 Silicon Labs 系列 - 包装 散装 零件状态 有源 功能 - 调制或协议 低功耗蓝牙（BLE）V4.0 频率 2.4GHz 应用 - 接口 USB 灵敏度 -93dBm 功率 - 输出 0dBm 数据速率（最大值） 1Mbps 特性 - 电压 - 供电 5V
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2019-4-1
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