RF Manual 16th edition

Power LDMOS transistor

General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Features and benefits  Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 :  Outp

Power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (10 MHz to 500 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Power LDMOS transistor

Power LDMOS transistor

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications withou

RF Manual 16th edition

Power LDMOS transistor

RF Manual 16th edition

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications withou

RF Manual 16th edition

Power LDMOS transistor

文件：329.58 Kbytes Page：14 Pages

封装/外壳：SOT-539A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET LDMOS DL 50V SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

文件：319.88 Kbytes Page：15 Pages

封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 110V 23.5DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频

VERY FAST, COMPLETE 10- OR 12-BIT A/D CONVERTERS

GENERAL DESCRIPTION The AD578 and AD579 are high speed 12-bit and 10-bit successive approximation analog-to-digital converters that include internal clock, reference, and comparator. Their hybrid design utilizes MSI digital and linear ICs in conjunction with a 12-bit or 10 bit monolithic, monoton

VERY FAST, COMPLETE 10- OR 12-BIT A/D CONVERTERS

GENERAL DESCRIPTION The AD578 and AD579 are high speed 12-bit and 10-bit successive approximation analog-to-digital converters that include internal clock, reference, and comparator. Their hybrid design utilizes MSI digital and linear ICs in conjunction with a 12-bit or 10 bit monolithic, monoton

Damper diodes

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellen

Silicon Rectifier Schottky Barrier, General Purpose

Description: The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–v

Unity gain level programmable low power compandor

DESCRIPTION The SA578 is a unity gain level programmable compandor designed for low power applications. The SA578 is internally configured as an expandor and a compressor to minimize external component count. The summing amplifiers of the SA578 have 600Ω drive capability and the inverting input