HF / VHF power LDMOS transistor

RF Manual 16th edition

HF / VHF power LDMOS transistor

General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits  Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:  Average out

HF / VHF power LDMOS transistor

HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF and VHF band)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

封装/外壳：SOT-502B 包装：散装 描述：RF FET LDMOS 110V 27.2DB SOT502B 分立半导体产品 晶体管 - FET，MOSFET - 射频

Octal D-type transparent latch with 5-volt tolerant inputs/outputs 3-State

DESCRIPTION The 74LVC573A is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3V or 5V devices. In 3-State operation, outputs can handle 5V. This feature allows the use of these devices as

Octal D-Type Latch with 3-State Outputs With 5 V?뭈olerant Inputs

The MC74LVX573 is an advanced high speed CMOS octal latch with 3−state outputs. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. This 8−bit D−type latch is controlled by a latch enable input and an output enable input. When the output enable inpu

Schottky Barrier Rectifier

Description: The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low–voltage, high–frequency inverters, a

P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING

P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-70 • Directly driven by ICs ha

OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS

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