RF Mosfet

DUAL N-Channel MOSFET Tetrode ·Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL)\n ·Two AGC amplifiers in one single package\n ·Integrated gate protection diodes\n ·High AGC-range, low noise figure, high gain\n ·Improved cross modulation at gain reduction\n ·Pb-free (RoHS compliant) package\n ·Qualif;

RF Mosfet

DUAL N-Channel MOSFET Tetrode ·Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL)\n ·Two AGC amplifiers in one single package\n ·Integrated gate protection diodes\n ·High AGC-range, low noise figure, high gain\n ·Improved cross modulation at gain reduction\n ·Pb-free (RoHS compliant) package\n ·Qualif;

DUAL N-Channel MOSFET Tetrode

文件：168.43 Kbytes Page：6 Pages

DUAL N-Channel MOSFET Tetrode

文件：88.36 Kbytes Page：10 Pages

DUAL N-Channel MOSFET Tetrode

文件：88.36 Kbytes Page：10 Pages

封装/外壳：6-VSSOP，SC-88，SOT-363 包装：散装 描述：MOSFET N-CH DUAL 8V 25MA SOT363 分立半导体产品 晶体管 - FET，MOSFET - 射频

DUAL N-Channel MOSFET Tetrode

文件：88.36 Kbytes Page：10 Pages

DUAL N-Channel MOSFET Tetrode

文件：168.43 Kbytes Page：6 Pages

封装/外壳：6-VSSOP，SC-88，SOT-363 包装：带 描述：MOSFET N-CH DUAL 8V SOT-363 分立半导体产品 晶体管 - FET，MOSFET - 射频

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages