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位置：首页 > IC中文资料第6367页 > BFY19

BFY19晶体管资料

  • BFY19别名：BFY19三极管、BFY19晶体管、BFY19晶体三极管

  • BFY19生产厂家：德国椤茨标准电器公司

  • BFY19制作材料：Si-NPN

  • BFY19性质：射频/高频放大 （HF）_开关管 （S）

  • BFY19封装形式：直插封装

  • BFY19极限工作电压：30V

  • BFY19最大电流允许值：0.1A

  • BFY19最大工作频率：400MHZ

  • BFY19引脚数：3

  • BFY19最大耗散功率：0.3W

  • BFY19放大倍数：

  • BFY19图片代号：D-8

  • BFY19vtest：30

  • BFY19htest：400000000

  • BFY19atest：0.1

  • BFY19wtest：0.3

  • BFY19代换 BFY19用什么型号代替：BC108,BC172,BC183,BC238,BSW41,BSY63,2N2221,2N2222,3DG122A,

型号 功能描述 生产厂家 企业 LOGO 操作
BFY193

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 8 GHz, F = 2.3 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006

SIEMENS

西门子

BFY193

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193ES

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193H

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193P

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193S

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY196

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 6.5 GHz, F = 3 dB at 2 GHz • ESA Qualification pending

SIEMENS

西门子

BFY196

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY196H

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY196P

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY196S

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY193

HiRel NPN Silicon RF Transistor

文件：149.81 Kbytes Page：4 Pages

Infineon

英飞凌

BFY193

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)

Infineon

英飞凌

BFY193_11

HiRel NPN Silicon RF Transistor

文件：149.81 Kbytes Page：4 Pages

Infineon

英飞凌

BFY193C (P)

高可靠性分立器件

Infineon

英飞凌

BFY193PZZZA1

封装/外壳：MICRO-X1 包装：卷带（TR） 描述：RF TRANS NPN 12V 7.5GHZ MICRO X1 分立半导体产品 晶体管 - 双极（BJT）- 射频

Infineon

英飞凌

BFY196

HiRel NPN Silicon RF Transistor

Infineon

英飞凌

BFY196

HiRel NPN Silicon RF Transistor

文件：149.38 Kbytes Page：4 Pages

Infineon

英飞凌

BFY196_11

HiRel NPN Silicon RF Transistor

文件：149.38 Kbytes Page：4 Pages

Infineon

英飞凌

BFY19产品属性

  • 类型

    描述

  • 型号

    BFY19

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    HiRel NPN Silicon RF Transistor

BFY19供应商更多...

更新时间：2025-12-24 19:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
BFY20
MOT/PHI
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
询价
深圳市豪迈兴电子有限公司
BFY20
MOT/ST/PH
24+
CAN6
13523
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市昊创电子有限公司
BFY20
MOT/PHI
专业铁帽
CAN3
9500
原装铁帽专营,代理渠道量大可订货
询价
深圳市宏捷佳电子科技有限公司
BFY20
MOT
2023+
CAN6
50000
原装现货
询价
深圳市安富世纪电子有限公司
BFY193SAMZZZA1
INFINEON
23+
CG-UX-4
8000
只做原装现货
询价
天津市博通航睿技术有限公司
BFY193SAMZZZA1
INFINEON
23+
CG-UX-4
7000
询价
深圳市河锋鑫科技有限公司
BFY193ESZZZA1
INFINEON
22+
CG-UX-4
8000
终端可免费供样,支持BOM配单
询价
深圳市弘为电子有限公司
BFY20
MOT/PHI
24+
CAN3
9500
原装现货假一罚十
询价
深圳市亿智腾科技有限公司
BFY193PZZZA1
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
深圳市科雨电子有限公司
BFY193PZZZA1
INFINEON
25+
MICRO-X1
3000
就找我吧!--邀您体验愉快问购元件!
询价

BFY19芯片相关品牌

BFY19规格书下载地址

BFY19参数引脚图相关

BFY19数据表相关新闻

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