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位置：首页 > IC中文资料第6367页 > BFY19

BFY19晶体管资料

  • BFY19别名：BFY19三极管、BFY19晶体管、BFY19晶体三极管

  • BFY19生产厂家：德国椤茨标准电器公司

  • BFY19制作材料：Si-NPN

  • BFY19性质：射频/高频放大 （HF）_开关管 （S）

  • BFY19封装形式：直插封装

  • BFY19极限工作电压：30V

  • BFY19最大电流允许值：0.1A

  • BFY19最大工作频率：400MHZ

  • BFY19引脚数：3

  • BFY19最大耗散功率：0.3W

  • BFY19放大倍数：

  • BFY19图片代号：D-8

  • BFY19vtest：30

  • BFY19htest：400000000

  • BFY19atest：0.1

  • BFY19wtest：0.3

  • BFY19代换 BFY19用什么型号代替：BC108,BC172,BC183,BC238,BSW41,BSY63,2N2221,2N2222,3DG122A,

型号 功能描述 生产厂家&企业 LOGO 操作
BFY193

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 8 GHz, F = 2.3 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006

SIEMENS

西门子

BFY193

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193ES

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193H

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193P

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193S

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY196

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 6.5 GHz, F = 3 dB at 2 GHz • ESA Qualification pending

SIEMENS

西门子

BFY196

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY196H

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY196P

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY196S

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

Infineon

英飞凌

BFY193

HiRel NPN Silicon RF Transistor

文件：149.81 Kbytes Page：4 Pages

Infineon

英飞凌

BFY193_11

HiRel NPN Silicon RF Transistor

文件：149.81 Kbytes Page：4 Pages

Infineon

英飞凌

BFY193PZZZA1

封装/外壳：MICRO-X1 包装：卷带（TR） 描述：RF TRANS NPN 12V 7.5GHZ MICRO X1 分立半导体产品 晶体管 - 双极（BJT）- 射频

Infineon

英飞凌

BFY196

HiRel NPN Silicon RF Transistor

文件：149.38 Kbytes Page：4 Pages

Infineon

英飞凌

BFY196_11

HiRel NPN Silicon RF Transistor

文件：149.38 Kbytes Page：4 Pages

Infineon

英飞凌

BFY19产品属性

  • 类型

    描述

  • 型号

    BFY19

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    HiRel NPN Silicon RF Transistor

BFY19供应商更多...

更新时间：2025-8-11 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市亿智腾科技有限公司
BFY193PZZZA1
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
深圳市安富世纪电子有限公司
BFY193SAMZZZA1
INFINEON
23+
CG-UX-4
8000
只做原装现货
询价
深圳市河锋鑫科技有限公司
BFY193ESZZZA1
INFINEON
22+
CG-UX-4
8000
终端可免费供样,支持BOM配单
询价
深圳市永贝尔科技有限公司
BFY193
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
天津市博通航睿技术有限公司
BFY193SAMZZZA1
INFINEON
23+
CG-UX-4
7000
询价
深圳市科雨电子有限公司
BFY193PZZZA1
INFINEON
1503+
MICRO-X1
3000
就找我吧!--邀您体验愉快问购元件!
询价

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BFY19规格书下载地址

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BFY19数据表相关新闻

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