型号 功能描述 生产厂家&企业 LOGO 操作
BFY193

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

BFY193

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 8 GHz, F = 2.3 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006

SIEMENS

西门子

BFY193

HiRel NPN Silicon RF Transistor

文件:149.81 Kbytes Page:4 Pages

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.:

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

文件:149.81 Kbytes Page:4 Pages

Infineon

英飞凌

封装/外壳:MICRO-X1 包装:卷带(TR) 描述:RF TRANS NPN 12V 7.5GHZ MICRO X1 分立半导体产品 晶体管 - 双极(BJT)- 射频

Infineon

英飞凌

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Side Actuated, Through Hole DIP Switches

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西迪斯西迪斯公司

Aluminum Electrolytic Capacitors

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BFY193产品属性

  • 类型

    描述

  • 型号

    BFY193

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    HiRel NPN Silicon RF Transistor

更新时间:2025-8-12 10:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
22+
CG-UX-4
8000
终端可免费供样,支持BOM配单
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
INFINEON
23+
CG-UX-4
7000
INFINEON
23+
CG-UX-4
8000
只做原装现货
INFINEON
1503+
MICRO-X1
3000
就找我吧!--邀您体验愉快问购元件!

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