HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 6.5 GHz, F = 3 dB at 2 GHz • ESA Qualification pending

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

HiRel NPN Silicon RF Transistor

• HiRel Discrete and Microwave Semiconductor\n• For low noise, high-gain amplifiers up to 2GHz.\n• For linear broadband amplifiers\n• Hermetically sealed microwave package\n• fT= 6,5 GHz\n  F = 3 dB at 2 GHz\n• eesa Space Qualified\n   ESA/SCC Detail Spec. No.: 5611/006\n   Type Variant No. 07

HiRel NPN Silicon RF Transistor

文件：149.38 Kbytes Page：4 Pages

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5

HiRel NPN Silicon RF Transistor

文件：149.38 Kbytes Page：4 Pages

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ)

GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)

GaAs MMIC ● Broadband Power Amplifier [ 800..3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

LM196/LM396 10 Amp Adjustable Voltage Regulator

文件：295.32 Kbytes Page：14 Pages