HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz, F = 2.2 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

HiRel NPN Silicon RF Transistor

• HiRel Discrete and Microwave Semiconductor\n• For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.\n• Hermetically sealed microwave package\n• fT= 8 GHz\n   F = 2.2 dB at 2 GHz\n• eesa Space Qualified\n   ESA/SCC Detail Spec. No.: 5611/006\n   Type Variant No.

HiRel NPN Silicon RF Transistor

文件：148.75 Kbytes Page：4 Pages

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

HiRel NPN Silicon RF Transistor

文件：148.75 Kbytes Page：4 Pages

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,