型号 功能描述 生产厂家&企业 LOGO 操作
BFY181

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz, F = 2.2 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006

SIEMENS

西门子

BFY181

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

Infineon

英飞凌

BFY181

HiRel NPN Silicon RF Transistor

文件:148.75 Kbytes Page:4 Pages

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S

Infineon

英飞凌

HiRel NPN Silicon RF Transistor

文件:148.75 Kbytes Page:4 Pages

Infineon

英飞凌

Unbased Lens-End Lamps

Unbased Lens-End Lamps Unbased Lamps

GILWAY

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

MINIATURE FUSES - 5x20 mm

文件:88.23 Kbytes Page:2 Pages

Littelfuse

力特

Combination of Thin, Flexible, Solid Cu Conductors embedded between layers of Tough

文件:545.49 Kbytes Page:2 Pages

ARIES

Aries Electronics,inc

INSERT, THRU, REGULAR HEAD STYLE

文件:20.31 Kbytes Page:1 Pages

WITTEN

BFY181产品属性

  • 类型

    描述

  • 型号

    BFY181

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    HiRel NPN Silicon RF Transistor

更新时间:2025-8-14 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NO
24+
12
MOT/ST/PH
24+
CAN3
13523
公司原厂原装现货假一罚十!特价出售!强势库存!
INFINEON
23+
CG-UX-4
8000
只做原装现货
INFINEON
23+
CG-UX-4
7000
INFINEON
22+
CG-UX-4
8000
终端可免费供样,支持BOM配单
MOT/PHI
24+
CAN3
19500
原装现货假一罚十
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样

BFY181数据表相关新闻