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BFY18晶体管资料

BFY18别名：BFY18三极管、BFY18晶体管、BFY18晶体三极管
BFY18生产厂家：德国椤茨标准电器公司
BFY18制作材料：Si-NPN
BFY18性质：射频/高频放大（HF）_开关管（S）
BFY18封装形式：直插封装
BFY18极限工作电压：40V
BFY18最大电流允许值：0.1A
BFY18最大工作频率：145MHZ
BFY18引脚数：3
BFY18最大耗散功率：0.3W
BFY18放大倍数：
BFY18图片代号：D-8
BFY18vtest：40
BFY18htest：145000000
BFY18atest：0.1
BFY18wtest：0.3

BFY18代换 BFY18用什么型号代替：BC107,BC171,BC183,BC237,BSW41,BSY63,2N2221,2N2222,3DG120C,

型号	功能描述	生产厂家企业	LOGO
BFY18	Small Signal Transistors 文件：33.47 Kbytes Page：1 Pages	CENTRAL	CENTRAL
BFY18	Trans GP BJT NPN 25V 3-Pin TO-18 Box	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BFY180	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • fT = 6.5 GHz, F = 2.6 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006	SIEMENS 西门子	SIEMENS
BFY180	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant	INFINEON 英飞凌	INFINEON
BFY180ES	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant	INFINEON 英飞凌	INFINEON
BFY180H	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant	INFINEON 英飞凌	INFINEON
BFY180P	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant	INFINEON 英飞凌	INFINEON
BFY180S	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant	INFINEON 英飞凌	INFINEON
BFY181	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S	INFINEON 英飞凌	INFINEON
BFY181	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz, F = 2.2 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006	SIEMENS 西门子	SIEMENS
BFY181	HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor\n• For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.\n• Hermetically sealed microwave package\n• fT= 8 GHz\n F = 2.2 dB at 2 GHz\n• eesa Space Qualified\n ESA/SCC Detail Spec. No.: 5611/006\n Type Variant No.	INFINEON 英飞凌	INFINEON
BFY181ES	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S	INFINEON 英飞凌	INFINEON
BFY181H	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S	INFINEON 英飞凌	INFINEON
BFY181P	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S	INFINEON 英飞凌	INFINEON
BFY181S	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail S	INFINEON 英飞凌	INFINEON
BFY182	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.	INFINEON 英飞凌	INFINEON
BFY182	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • fT = 8 GHz, F = 2.4 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006	SIEMENS 西门子	SIEMENS
BFY182ES	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.	INFINEON 英飞凌	INFINEON
BFY182H	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.	INFINEON 英飞凌	INFINEON
BFY182P	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.	INFINEON 英飞凌	INFINEON
BFY182S	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz • eesa Space Qualified ESA/SCC Detail Spec.	INFINEON 英飞凌	INFINEON
BFY183	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor ● HiRel Discrete and Microwave Semiconductor ● For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. ● Hermetically sealed microwave package ● fT= 8 GHz F = 2.3 dB at 2 GHz ● eesa qualified ● ESA/SCC Detail Spec. No.: 5611/006	INFINEON 英飞凌	INFINEON
BFY183	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • fT = 8 GHz, F = 2.3 dB at 2 GHz • eesa qualified • ESA/SCC Detail Spec. No.: 5611/006	SIEMENS 西门子	SIEMENS
BFY183ES	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor ● HiRel Discrete and Microwave Semiconductor ● For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. ● Hermetically sealed microwave package ● fT= 8 GHz F = 2.3 dB at 2 GHz ● eesa qualified ● ESA/SCC Detail Spec. No.: 5611/006	INFINEON 英飞凌	INFINEON
BFY183H	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor ● HiRel Discrete and Microwave Semiconductor ● For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. ● Hermetically sealed microwave package ● fT= 8 GHz F = 2.3 dB at 2 GHz ● eesa qualified ● ESA/SCC Detail Spec. No.: 5611/006	INFINEON 英飞凌	INFINEON
BFY183P	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor ● HiRel Discrete and Microwave Semiconductor ● For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. ● Hermetically sealed microwave package ● fT= 8 GHz F = 2.3 dB at 2 GHz ● eesa qualified ● ESA/SCC Detail Spec. No.: 5611/006	INFINEON 英飞凌	INFINEON
BFY183S	HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor ● HiRel Discrete and Microwave Semiconductor ● For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. ● Hermetically sealed microwave package ● fT= 8 GHz F = 2.3 dB at 2 GHz ● eesa qualified ● ESA/SCC Detail Spec. No.: 5611/006	INFINEON 英飞凌	INFINEON
BFY181	HiRel NPN Silicon RF Transistor 文件：148.75 Kbytes Page：4 Pages	INFINEON 英飞凌	INFINEON
BFY181_11	HiRel NPN Silicon RF Transistor 文件：148.75 Kbytes Page：4 Pages	INFINEON 英飞凌	INFINEON
BFY182	HiRel NPN Silicon RF Transistor	INFINEON 英飞凌	INFINEON
BFY182	HiRel NPN Silicon RF Transistor 文件：148.58 Kbytes Page：4 Pages	INFINEON 英飞凌	INFINEON
BFY182_11	HiRel NPN Silicon RF Transistor 文件：148.58 Kbytes Page：4 Pages	INFINEON 英飞凌	INFINEON
BFY183	HiRel NPN Silicon RF Transistor 文件：149.46 Kbytes Page：4 Pages	INFINEON 英飞凌	INFINEON
BFY183_11	HiRel NPN Silicon RF Transistor 文件：149.46 Kbytes Page：4 Pages	INFINEON 英飞凌	INFINEON

BFY18产品属性

类型
描述
Configuration：
Single
Maximum Collector Base Voltage：
40V
Maximum Collector Emitter Saturation Voltage：
1.5@10mAV
Maximum Collector Emitter Voltage：
25V
Maximum Emitter Base Voltage：
3V
Maximum Transition Frequency：
200(Min)MHz
Type：
NPN

BFY18供应商更多...

更新时间：2026-5-14 19:39:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	BFY18	MOT/PHI	专业铁帽	CAN3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市豪迈兴电子有限公司	BFY18	MOT/ST/PH	24+	CAN3	13523	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市一线半导体有限公司	BFY18	MOT	24+	CAN3	450000		询价
深圳市昊创电子有限公司	BFY18	MOT/PHI	专业铁帽	CAN3	19500	原装铁帽专营,代理渠道量大可订货	询价
深圳市安富世纪电子有限公司	BFY183SAMZZZA1	INFINEON	23+	CG-UX-4	8000	只做原装现货	询价
天津市博通航睿技术有限公司	BFY183SAMZZZA1	INFINEON	23+	CG-UX-4	7000		询价
深圳市河锋鑫科技有限公司	BFY182ESZZZA1	INFINEON	22+	CG-UX-4	8000	终端可免费供样,支持BOM配单	询价
深圳市弘为电子有限公司	BFY18	MOT/PHI	24+	CAN3	19500	原装现货假一罚十	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

BFY18晶体管资料

BFY18产品属性

BFY18供应商更多...

BFY18芯片相关品牌

BFY18规格书下载地址

BFY18参数引脚图相关

BFY18数据表相关新闻

BG25Q80ASTIG 看起来像是一个集成电路（IC）或半导体器件的型号。

B-G474E-DPOW1

B-G431B-ESC1

BFU520A

BFU730F115

BFU768F

DdatasheetPDF页码索引