NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible l

NPN Silicon RF Transistor

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier for low current applications • Collector design supports 5 V supply voltage • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible l

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

低噪声RF 管基

NPN硅射频晶体管 • 低电压/低电流操作\n• 适用于高达 3.5 GHz 且 Pout > 10 dBm 的振荡器\n• 无铅（符合 RoHS 标准）封装;

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz

Low noise amplifier for low current applications

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NPN Silicon RF Transistor

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6V,0.035A,General Purpose NPN Bipolar Transistor

NPN Silicon RF Transistor

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Low noise amplifier for low current applications

文件：583.83 Kbytes Page：9 Pages

封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 9V 14GHZ TSFP-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 9V 14GHZ TSFP-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN Silicon RF Transistor

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Low voltage/ Low current operation

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NPN Silicon RF Transistor

文件：79.62 Kbytes Page：9 Pages

Low voltage/ Low current operation

文件：611.74 Kbytes Page：8 Pages

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

HIGH SPEED DIFFRENTIAL COMPARATOR

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HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages