NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz

RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators up to 4GHz

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages