NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

NPN Silicon RF Transistor

文件：134.24 Kbytes Page：7 Pages

RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

Silicon NPN Planar RF Transistor

Features • Low power applications • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

Silicon NPN Planar RF Transistor

Features • Low power applications • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

Silicon NPN Planar RF Transistor

Features • Low power applications • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

低噪声RF 管基

NPN 硅射频晶体管，用于低噪声、高增益宽带放大器，集电极电流为 1 mA 至 20 m • 适用于低噪声、高增益宽带放大器，集电极电流从 1 mA 到 20 mA\n• 无铅（符合 RoHS 标准）封装;

NPN Silicon RF Transistor

文件：134.24 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：556.5 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：144.86 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：144.86 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：556.5 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：299.93 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：266.34 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor

文件：266.34 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

文件：299.93 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：299.93 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：266.34 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

文件：299.93 Kbytes Page：6 Pages

Silicon NPN Planar RF Transistor

文件：266.34 Kbytes Page：5 Pages

Low Noise Silicon Bipolar RF Transistor

文件：551.25 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：145.99 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：145.99 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：551.25 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 12V 8GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：带 描述：RF TRANS NPN 12V 8GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances