NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

低噪声硅晶体管，频率高达2.5 GHz

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ·For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA\n ·fT = 8 GHz, F = 0.9 dB at 900 MHz\n ·Pb-free (RoHS compliant) package\n ·Qualification report according to AEC-Q101 available;

Low Noise Silicon Bipolar RF Transistor

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NPN Silicon RF Transistor

文件：144.86 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：144.86 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：556.5 Kbytes Page：6 Pages

封装/外壳：SOT-143R 包装：托盘 描述：RF TRANS NPN 12V 8GHZ SOT143R-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances