NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA

NPN Silicon RF Transistor

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

• For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN Systems • fT = 7.5 GHz F = 1.5 dB at 900 GHz

NPN 7 GHz wideband transistor

DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low nois

NPN 7 GHz wideband transistor

DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low nois

NPN 7 GHz wideband transistor

DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low nois

NPN 7 GHz wideband transistor

DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low nois

NPN 7 GHz wideband transistor

DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low nois

NPN 8 GHz wideband transistor

DESCRIPTION NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.

RF Manual 16th edition

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA

Trans GP BJT NPN 12V 0.08A Automotive 4-Pin(3+Tab) SOT-223

NPN Silicon RF Transistor

文件：62.15 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：62.15 Kbytes Page：6 Pages

PNP Silicon RF transistor for low dis...

NPN Silicon RF Transistor

文件：62.87 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：62.87 Kbytes Page：6 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：RF TRANS NPN 10V 8GHZ SOT223 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 8 GHz wideband transistor

文件：83.89 Kbytes Page：12 Pages

NPN 8 GHz wideband transistor

文件：83.89 Kbytes Page：12 Pages

NPN Silicon RF Transistor

文件：512.049 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：512.049 Kbytes Page：6 Pages