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BFG196晶体管资料
BFG196别名:BFG196三极管、BFG196晶体管、BFG196晶体三极管
BFG196生产厂家:德国西门子AG公司
BFG196制作材料:Si-NPN
BFG196性质:超高频/特高频 (UHF)_宽频带放大 (A)
BFG196封装形式:贴片封装
BFG196极限工作电压:20V
BFG196最大电流允许值:0.1A
BFG196最大工作频率:7.2GHZ
BFG196引脚数:3
BFG196最大耗散功率:
BFG196放大倍数:
BFG196图片代号:H-99
BFG196vtest:20
BFG196htest:7200000000
- BFG196atest:0.1
BFG196wtest:0
BFG196代换 BFG196用什么型号代替:BFG135,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BFG196 | NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz | SIEMENS 西门子 | ||
BFG196 | NPN Silicon RF Transistor NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN Systems • fT = 7.5 GHz F = 1.5 dB at 900 GHz | INFINEON 英飞凌 | ||
BFG196 | NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA\n• Power amplifier for DECT and PCN Systems\n• fT = 7.5 GHz\n F = 1.5 dB at 900 GHz | INFINEON 英飞凌 | ||
BFG196 | NPN Silicon RF Transistor 文件:62.87 Kbytes Page:6 Pages | INFINEON 英飞凌 | ||
NPN Silicon RF Transistor 文件:62.87 Kbytes Page:6 Pages | INFINEON 英飞凌 | |||
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ) | SIEMENS 西门子 | |||
GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply) GaAs MMIC ● Broadband Power Amplifier [ 800..3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter | SIEMENS 西门子 | |||
Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE | NTE | |||
TRISILTM DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE | STMICROELECTRONICS 意法半导体 | |||
LM196/LM396 10 Amp Adjustable Voltage Regulator 文件:295.32 Kbytes Page:14 Pages | NSC 国半 |
BFG196产品属性
- 类型
描述
- 型号
BFG196
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
NPN Silicon RF Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
2023+ |
SOT-223 |
5800 |
进口原装,现货热卖 |
|||
INFINEON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON |
26+ |
BGA |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
INFINEON |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON/英飞凌 |
25+ |
SOT-223 |
32000 |
INFINEON/英飞凌全新特价BFG196即刻询购立享优惠#长期有货 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
PHI |
25+ |
SOT223 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
N/A |
2450+ |
SOT223 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
INFINEON/英飞凌 |
24+ |
SOD123 |
9600 |
原装现货,优势供应,支持实单! |
|||
INFINEO |
24+ |
SOT-223 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
BFG196芯片相关品牌
BFG196规格书下载地址
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BFG196数据表相关新闻
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DdatasheetPDF页码索引
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