位置:首页 > IC中文资料第6393页 > BFG196

BFG196晶体管资料

  • BFG196别名:BFG196三极管、BFG196晶体管、BFG196晶体三极管

  • BFG196生产厂家:德国西门子AG公司

  • BFG196制作材料:Si-NPN

  • BFG196性质:超高频/特高频 (UHF)_宽频带放大 (A)

  • BFG196封装形式:贴片封装

  • BFG196极限工作电压:20V

  • BFG196最大电流允许值:0.1A

  • BFG196最大工作频率:7.2GHZ

  • BFG196引脚数:3

  • BFG196最大耗散功率

  • BFG196放大倍数

  • BFG196图片代号:H-99

  • BFG196vtest:20

  • BFG196htest:7200000000

  • BFG196atest:0.1

  • BFG196wtest:0

  • BFG196代换 BFG196用什么型号代替:BFG135,

型号 功能描述 生产厂家 企业 LOGO 操作
BFG196

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN Systems • fT = 7.5 GHz F = 1.5 dB at 900 GHz

INFINEON

英飞凌

BFG196

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

SIEMENS

西门子

BFG196

NPN Silicon RF Transistor

• For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA\n• Power amplifier for DECT and PCN Systems\n• fT = 7.5 GHz\n     F = 1.5 dB at 900 GHz

INFINEON

英飞凌

BFG196

NPN Silicon RF Transistor

文件:62.87 Kbytes Page:6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件:62.87 Kbytes Page:6 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ)

SIEMENS

西门子

GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)

GaAs MMIC ● Broadband Power Amplifier [ 800 3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter

SIEMENS

西门子

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

LM196/LM396 10 Amp Adjustable Voltage Regulator

文件:295.32 Kbytes Page:14 Pages

NSC

国半

BFG196产品属性

  • 类型

    描述

  • 型号

    BFG196

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    NPN Silicon RF Transistor

更新时间:2026-7-31 20:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
SOT-223
32000
INFINEON/英飞凌全新特价BFG196即刻询购立享优惠#长期有货
INFINEON
25+
66880
原装正品,欢迎询价
Infineon(英飞凌)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INF
24+
NA
5100
只做原装正品现货 欢迎来电查询15919825718
Infineon(英飞凌)
23+
19850
原装正品,假一赔十
PHI
25+
SOT223
2987
只售原装自家现货!诚信经营!欢迎来电!
N/A
2450+
SOT223
6540
只做原装正品现货或订货!终端客户免费申请样品!
ON
26+
SOT23
20000
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
Infineon(英飞凌)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Infineon(英飞凌)
25+
N/A
22412
原装正品现货,原厂订货,可支持含税原型号开票。

BFG196数据表相关新闻

  • BFHK-1982+

    BFHK-1982+

    2023-3-22
  • BFG235

    进口代理

    2022-11-12
  • BFC233920474

    BFC233920474

    2022-10-13
  • BFP640

    BFP640INFINEON/英飞凌900019+SOT343原盘原标 一罚十优势现货

    2021-9-17
  • BF862215

    JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射

    2020-8-5
  • BF998,现货销售,只售原装,兴中扬电子

    BF998,现货销售,只售原装,兴中扬电子

    2019-11-30