位置：首页 > IC中文资料第5855页 > BFG11W
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BFG11W | NPN 2 GHz power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-l | Philips 飞利浦 |   | |
NPN 2 GHz power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-l | Philips 飞利浦 | | ||
NPN 2 GHz power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-l | Philips 飞利浦 | |
BFG11W产品属性
- 类型
描述
- 型号
BFG11W
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
NPN 2 GHz power transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
SOT-143 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PHI |
25+ |
SOT343 |
15000 |
原装正品,假一罚十! |
|||
PHI |
24+ |
NA/ |
15000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PHI |
24+/25+ |
3000 |
原装正品现货库存价优 |
||||
PHI |
1822+ |
SOT-143 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
恩XP |
2023+ |
SOT343 |
8700 |
原装现货 |
|||
PHI |
21+ |
SOT-143 |
5660 |
原装现货假一赔十 |
|||
SOT-343 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PHI |
22+ |
SOT122A |
8000 |
原装正品支持实单 |
|||
PHIL |
01+ |
TO89 |
199 |
原装现货海量库存欢迎咨询 |
BFG11W规格书下载地址
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2019-11-30
DdatasheetPDF页码索引
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