DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

FEATURES

• High power gain

• High efficiency

• Small size discrete power amplifier

• 1.9 GHz operating area

• Gold metallization ensures excellent reliability

• Linear and non-linear operation.

APPLICATIONS

• Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.

• Driver for DCS 1800.