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IGBT驱动芯片

BYD

比亚迪半导体

20V一驱三驱动芯片 IGBT低压驱动IC解决方案

BYD

比亚迪半导体

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

PHILIPS

飞利浦

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

NTE

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

ONSEMI

安森美半导体

POWER TRANSISTORS(2.0A,60-100V,50W)

MOSPEC

统懋

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA

摩托罗拉

BF116产品属性

  • 类型

    描述

  • 输入电压:

    0V~20V

  • 欠压保护:

    12V

  • 欠压恢复:

    13V

  • 输出电压:

    0V~20V

  • 驱动外拉电流:

    300mA

  • 驱动内灌电流:

    600mA

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