位置：首页 > IC中文资料第8382页 > BD13003B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD13003B | NPN Plastic Encapsulated Transistor 1.5A , 700V NPN Plastic Encapsulated Transistor FEATURES • Power Switching Applications | SECOS 喜可士 |   | |
BD13003B | 丝印代码：13003；NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | |
BD13003B | Medium Power Transistor | SECOS 喜可士 | | |
NPN Plastic Encapsulated Transistor 文件：770.84 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
BD13003B产品属性
- 类型
描述
- 型号
BD13003B
- 制造商
SECOS
- 制造商全称
SeCoS Halbleitertechnologie GmbH
- 功能描述
NPN Plastic Encapsulated Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
BYD |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
PANJIT/强茂 |
2450+ |
TO252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
C&KCOMPONENTS |
26+ |
NA |
23834 |
原装现货 专业配单专家 |
|||
PANJIT/强茂 |
25+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
|||
PANJIT/强茂 |
26+ |
TO-252 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
PANJIT |
25+23+ |
TO-252(DP |
21616 |
绝对原装正品全新进口深圳现货 |
|||
PANJIT/强茂 |
24+ |
TO252 |
42000 |
只做原装进口现货 |
|||
C&K |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TE/泰科 |
2608+ |
/ |
343380 |
一级代理，原装现货 |
BD13003B芯片相关品牌
BD13003B规格书下载地址
BD13003B参数引脚图相关
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原装现货
2019-9-11
DdatasheetPDF页码索引
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