位置：首页 > IC中文资料第8382页 > BD13003B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD13003B | NPN Plastic Encapsulated Transistor 1.5A , 700V NPN Plastic Encapsulated Transistor FEATURES • Power Switching Applications | SECOS 喜可士 |   | |
BD13003B | 丝印代码：13003；NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | |
BD13003B | Medium Power Transistor | SECOS 喜可士 | | |
NPN Plastic Encapsulated Transistor 文件：770.84 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
NPN Plastic-Encapsulated Transistor 文件：255.68 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
BD13003B产品属性
- 类型
描述
- 型号
BD13003B
- 制造商
SECOS
- 制造商全称
SeCoS Halbleitertechnologie GmbH
- 功能描述
NPN Plastic Encapsulated Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
TO-126 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
恩XP |
23+ |
TO-126 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
25+ |
TO-126 |
20000 |
原装，请咨询 |
|||
ST/意法 |
23+ |
TO-3 |
15000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SIE |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
PANJIT/强茂 |
23+ |
TO252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ST |
26+ |
QFN |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
ST |
25+23+ |
TO-126 |
76174 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
24+ |
TO-3 |
10000 |
BD13003B规格书下载地址
BD13003B参数引脚图相关
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2019-9-11
DdatasheetPDF页码索引
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