BCR158晶体管资料
BCR158别名：BCR158三极管、BCR158晶体管、BCR158晶体三极管
BCR158生产厂家：
BCR158制作材料：Si-P+R
BCR158性质：表面帖装型 （SMD）
BCR158封装形式：贴片封装
BCR158极限工作电压：50V
BCR158最大电流允许值：0.1A
BCR158最大工作频率：<1MHZ或未知
BCR158引脚数：3
BCR158最大耗散功率：
BCR158放大倍数：
BCR158图片代号：H-15
BCR158vtest：50
BCR158htest：999900
- BCR158atest：0.1
BCR158wtest：0
BCR158代换 BCR158用什么型号代替：DTA123JK,KSR2113,RN2405,UN211M,
BCR158价格
参考价格：￥0.1150
型号：BCR158E6327 品牌：INF 备注：这里有BCR158多少钱，2026年最近7天走势，今日出价，今日竞价，BCR158批发/采购报价，BCR158行情走势销售排行榜，BCR158报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR158 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) | SIEMENS 西门子 |   | |
BCR158 | PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | |
BCR158 | AF 数字晶体管 PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | |
BCR158 | PNP Silicon Digital Transistor 文件：181.83 Kbytes Page：10 Pages | INFINEON 英飞凌 | | |
BCR158 | 丝印代码：WIs；PNP Silicon Digital Transistor 文件：842.19 Kbytes Page：8 Pages | INFINEON 英飞凌 | | |
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) | SIEMENS 西门子 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：181.83 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：842.19 Kbytes Page：8 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：181.83 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：181.83 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
丝印代码：WIs；PNP Silicon Digital Transistor 文件：842.19 Kbytes Page：8 Pages | INFINEON 英飞凌 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
Plastic Medium Power NPN Silicon Transistor Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig | MOTOROLA 摩托罗拉 | | ||
TMOS BROADBAND RF POWER FET The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G | MOTOROLA 摩托罗拉 | | ||
L, S- BAND SPDT SWITCH DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin | NEC 瑞萨 | | ||
L, S- BAND SPDT SWITCH DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin | NEC 瑞萨 | | ||
Low Power Dual Operational Amplifiers 文件：1.0094 Mbytes Page：25 Pages | NSC 国半 | |
BCR158产品属性
- 类型
描述
- hFEmin：
70
- ICBOmax：
100 nA
- Ptotmax：
200 mW
- R1 / R2：
0.047
- R1：
2.2 kΩ
- R2：
47 kΩ
- VCBOmax：
50 V
- VCE(sat)max：
0.3 V
- VCEOmax：
50 V
- VEBOmax：
5 V
- Vi (off) max：
0.8 100µA / 5V
- Vi (on)max：
0.8 V
- Vi (on)min：
0.5 2mA / 0.3V
- Mounting：
SMT
- Polarity：
PNP (Single)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2450+ |
SOT-23 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEO |
24+ |
SOT323 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
25+23+ |
SOT323 |
16345 |
绝对原装正品全新进口深圳现货 |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
SIEMEMNS |
最新 |
SOT-23 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
Infineo |
25+ |
SOT-23 |
1840 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
Infineon/英飞凌 |
25+ |
SOT23-3 |
25000 |
原装正品,假一赔十! |
|||
Infineo |
23+ |
SOT-23 |
8560 |
受权代理!全新原装现货特价热卖! |
BCR158芯片相关品牌
BCR158规格书下载地址
BCR158参数引脚图相关
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DdatasheetPDF页码索引
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