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BCR158W晶体管资料

  • BCR158W别名:BCR158W三极管、BCR158W晶体管、BCR158W晶体三极管

  • BCR158W生产厂家

  • BCR158W制作材料:Si-P+R

  • BCR158W性质:表面帖装型 (SMD)

  • BCR158W封装形式:贴片封装

  • BCR158W极限工作电压:50V

  • BCR158W最大电流允许值:0.1A

  • BCR158W最大工作频率:<1MHZ或未知

  • BCR158W引脚数:3

  • BCR158W最大耗散功率

  • BCR158W放大倍数

  • BCR158W图片代号:H-15

  • BCR158Wvtest:50

  • BCR158Whtest:999900

  • BCR158Watest:0.1

  • BCR158Wwtest:0

  • BCR158W代换 BCR158W用什么型号代替:DTA123UK,RN2305,

BCR158W价格

参考价格:¥0.1528

型号:BCR158WH6327 品牌:Infineon 备注:这里有BCR158W多少钱,2026年最近7天走势,今日出价,今日竞价,BCR158W批发/采购报价,BCR158W行情走势销售排行榜,BCR158W报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCR158W

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)

SIEMENS

西门子

BCR158W

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

BCR158W

PNP Silicon Digital Transistor

文件:181.83 Kbytes Page:10 Pages

INFINEON

英飞凌

BCR158W

丝印代码:WIs;PNP Silicon Digital Transistor

文件:842.19 Kbytes Page:8 Pages

INFINEON

英飞凌

封装/外壳:SC-70,SOT-323 包装:卷带(TR) 描述:TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

封装/外壳:SC-70,SOT-323 包装:卷带(TR) 描述:TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

MOTOROLA

摩托罗拉

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

NEC

瑞萨

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

NEC

瑞萨

Low Power Dual Operational Amplifiers

文件:1.0094 Mbytes Page:25 Pages

NSC

国半

BCR158W产品属性

  • 类型

    描述

  • 型号

    BCR158W

  • 制造商

    Infineon Technologies AG

  • 功能描述

    Trans Digital BJT PNP 50V 100mA 3-Pin SOT-323 T/R

更新时间:2026-5-15 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon
原厂封装
9800
原装进口公司现货假一赔百
Infineon/英飞凌
25+
SOT323-3
12700
买原装认准中赛美
INFINEON
17+
SOT323
6200
100%原装正品现货
Infineon(英飞凌)
24+
SOT-323-3
3022
原厂订货渠道,支持BOM配单一站式服务
PHI
24+
SOT23-3
1068
原装现货假一罚十
INFINEO
24+
SOT323
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
linfneon
2026+
SOT323
27000
原装正品 假一罚十!
Infineon/英飞凌
24+
SOT323-3
6000
全新原装深圳仓库现货有单必成
INFINEON/英飞凌
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
Infineon(英飞凌)
23+
19850
原装正品,假一赔十

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