NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Digital Transistor

Features © Epitaxial planar die construction © Builtin biasing resistors (Ri: 22K0, Ry: 2240) © Also available in lead free version ® RoHS compliant with Halogen-free.

AF 数字晶体管

NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR141S：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求;

数字晶体管

NPN Silicon Digital Transistor

文件：872.44 Kbytes Page：11 Pages

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=10 kΩ, R2=47 kΩ) • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface, driver circuit)

NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

文件：872.44 Kbytes Page：11 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 250MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

丝印代码：WDs；NPN Silicon Digital Transistor

文件：248.02 Kbytes Page：12 Pages

NPN Silicon Digital Transistor

文件：248.02 Kbytes Page：12 Pages

丝印代码：WDs；NPN Silicon Digital Transistor

文件：248.02 Kbytes Page：12 Pages

NPN Silicon Digital Transistor

文件：872.44 Kbytes Page：11 Pages

丝印代码：WDs；NPN Silicon Digital Transistor

文件：248.02 Kbytes Page：12 Pages

丝印代码：WDs；NPN Silicon Digital Transistor

文件：248.02 Kbytes Page：12 Pages

Digital Transistor

NPN Silicon Digital Transistor

文件：872.44 Kbytes Page：11 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

POWER TRANSISTORS(10A,60-100V,125W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP