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BCR141W晶体管资料

  • BCR141W别名:BCR141W三极管、BCR141W晶体管、BCR141W晶体三极管

  • BCR141W生产厂家

  • BCR141W制作材料:Si-N+R

  • BCR141W性质:表面帖装型 (SMD)

  • BCR141W封装形式:贴片封装

  • BCR141W极限工作电压:50V

  • BCR141W最大电流允许值:0.1A

  • BCR141W最大工作频率:<1MHZ或未知

  • BCR141W引脚数:3

  • BCR141W最大耗散功率

  • BCR141W放大倍数

  • BCR141W图片代号:H-15

  • BCR141Wvtest:50

  • BCR141Whtest:999900

  • BCR141Watest:0.1

  • BCR141Wwtest:0

  • BCR141W代换 BCR141W用什么型号代替:DTC124EU,RN1303,UN5212,2SC4397,

BCR141W价格

参考价格:¥0.1528

型号:BCR141WH6327 品牌:Infineon 备注:这里有BCR141W多少钱,2026年最近7天走势,今日出价,今日竞价,BCR141W批发/采购报价,BCR141W行情走势销售排行榜,BCR141W报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCR141W

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

SIEMENS

西门子

BCR141W

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

BCR141W

NPN Silicon Digital Transistor

文件:872.44 Kbytes Page:11 Pages

INFINEON

英飞凌

BCR141W

丝印代码:WDs;NPN Silicon Digital Transistor

文件:248.02 Kbytes Page:12 Pages

INFINEON

英飞凌

BCR141W

Digital Transistor

INFINEON

英飞凌

封装/外壳:SC-70,SOT-323 包装:卷带(TR) 描述:TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

封装/外壳:SC-70,SOT-323 包装:卷带(TR) 描述:TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

MOTOROLA

摩托罗拉

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

ONSEMI

安森美半导体

POWER TRANSISTORS(10A,60-100V,125W)

MOSPEC

统懋

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

MOTOROLA

摩托罗拉

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

MOSPEC

统懋

BCR141W产品属性

  • 类型

    描述

  • Polarity :

    NPN (Single)

  • R1 :

    22.0kΩ 

  • R2 :

    22.0kΩ 

  • hFE min:

    50.0 

  • Vi (on) max:

    1.5V

  • Vi (on) min:

    1.02mA / 0.3V 

  • Vi (off)  max:

    1.5100µA / 5V

  • VCEO max:

    50.0V

  • VCBO max:

    50.0V

  • VEBO max:

    10.0V

  • Ptot max:

    250.0mW

  • ICBO max:

    100.0nA

  • fT :

    130.0MHz 

  • VCE(sat) max:

    0.3V

  • Mounting :

    SMT

  • R1 / R2 :

    1.0 

更新时间:2026-5-15 17:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon
24+
NA
3000
进口原装正品优势供应
Infineon/英飞凌
25+
SOT323-3
25000
原装正品,假一赔十!
INF
24+
NA
7000
只做原装正品现货 欢迎来电查询15919825718
Infineon(英飞凌)
24+
N/A
9855
原装正品现货支持实单
INFINEON
09+
SOT-323
320
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PHI
2450+
SOT323-3
6540
只做原装正品现货或订货!终端客户免费申请样品!
INFINEON
2025+
SOT-323
3685
全新原厂原装产品、公司现货销售
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
INFINEON
25+23+
SOT23
39293
绝对原装正品全新进口深圳现货
INFINEON
26+
SOT323
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订

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