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BCR141S晶体管资料

  • BCR141S别名:BCR141S三极管、BCR141S晶体管、BCR141S晶体三极管

  • BCR141S生产厂家

  • BCR141S制作材料:Si-N+R

  • BCR141S性质:差分放大器射极输出 (Dual)

  • BCR141S封装形式:贴片封装

  • BCR141S极限工作电压:50V

  • BCR141S最大电流允许值:0.1A

  • BCR141S最大工作频率:<1MHZ或未知

  • BCR141S引脚数:6

  • BCR141S最大耗散功率

  • BCR141S放大倍数

  • BCR141S图片代号:H-23

  • BCR141Svtest:50

  • BCR141Shtest:999900

  • BCR141Satest:0.1

  • BCR141Swtest:0

  • BCR141S代换 BCR141S用什么型号代替

BCR141S价格

参考价格:¥0.2300

型号:BCR141SH6327 品牌:Infineon Technologies 备注:这里有BCR141S多少钱,2026年最近7天走势,今日出价,今日竞价,BCR141S批发/采购报价,BCR141S行情走势销售排行榜,BCR141S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCR141S

NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface, driver circuit)

NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)

SIEMENS

西门子

BCR141S

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

BCR141S

AF 数字晶体管

NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR141S / U:两个内部隔离、匹配良好的晶体管,集成在一个多芯片封装中\n• 无铅(符合 RoHS 标准)封装 1)\n• 符合 AEC Q101 要求;

INFINEON

英飞凌

BCR141S

NPN Silicon Digital Transistor

文件:872.44 Kbytes Page:11 Pages

INFINEON

英飞凌

BCR141S

丝印代码:WDs;NPN Silicon Digital Transistor

文件:248.02 Kbytes Page:12 Pages

INFINEON

英飞凌

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

MOTOROLA

摩托罗拉

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

ONSEMI

安森美半导体

POWER TRANSISTORS(10A,60-100V,125W)

MOSPEC

统懋

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

MOTOROLA

摩托罗拉

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

MOSPEC

统懋

BCR141S产品属性

  • 类型

    描述

  • hFEmin:

    50

  • ICBOmax:

    100 nA

  • Ptotmax:

    250 mW

  • R1 / R2:

    1

  • R1:

    22 kΩ

  • R2:

    22 kΩ

  • VCBOmax:

    50 V

  • VCE(sat)max:

    0.3 V

  • VCEOmax:

    50 V

  • VEBOmax:

    10 V

  • Vi (off) max:

    1.5 100µA / 5V

  • Vi (on)max:

    1.5 V

  • Vi (on)min:

    1 2mA / 0.3V

  • Mounting:

    SMT

  • Polarity:

    NPN (Dual)

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
SOT-323-6
3022
原厂订货渠道,支持BOM配单一站式服务
INFINEO
24+
SOT363
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
linfneon
2026+
SOT363
3000
原装正品 假一罚十!
Infineon/英飞凌
24+
SOT363-6
6000
全新原装深圳仓库现货有单必成
INFINEON/英飞凌
25+
SOT363
32360
INFINEON/英飞凌全新特价BCR141SE6327即刻询购立享优惠#长期有货
Infineon/英飞凌
25+
SOT363-6
12700
买原装认准中赛美
INFINEON
2430+
SOT365
8540
只做原装正品假一赔十为客户做到零风险!!
infineon technologies
23+
NA
358700
原装现货 库存特价/长期供应元器件代理经销
Infineon(英飞凌)
23+
SOT-363
19850
原装正品,假一赔十
Infineon(英飞凌)
24+
N/A
9855
原装正品现货支持实单

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