BCP5晶体管资料

  • BCP51别名:BCP51三极管、BCP51晶体管、BCP51晶体三极管

  • BCP51生产厂家:荷兰飞利浦公司

  • BCP51制作材料:Si-PNP

  • BCP51性质:低频或音频放大 (LF)_功率放大 (L)

  • BCP51封装形式:贴片封装

  • BCP51极限工作电压:45V

  • BCP51最大电流允许值:1A

  • BCP51最大工作频率:<1MHZ或未知

  • BCP51引脚数:3

  • BCP51最大耗散功率:1.5W

  • BCP51放大倍数:β=250

  • BCP51图片代号:H-99

  • BCP51vtest:45

  • BCP51htest:999900

  • BCP51atest:1

  • BCP51wtest:1.5

  • BCP51代换 BCP51用什么型号代替

BCP5价格

参考价格:¥0.6167

型号:BCP51 品牌:Fairchild 备注:这里有BCP5多少钱,2024年最近7天走势,今日出价,今日竞价,BCP5批发/采购报价,BCP5行情走势销售排行榜,BCP5报价。
型号 功能描述 生产厂家&企业 LOGO 操作

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP Silicon AF Transistors

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Surface mount Si-Epitaxial PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

PNP Medium Power Transistors

■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

-1A , -45V PNP Plastic Encapsulate Transistor

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

45 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

High Collector Current

Features •Highcollectorcurrent •1.3Wpowerdissipation.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

TRANSISTOR (PNP)

FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN)

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

Plastic-Encapsulate Transistors

FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

PNP Transistors

Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-223 Plastic-Encapsulate Transistors

FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

GeneralPurposeMediumPowerDCApplications ComplementaryBCP54BCP55andBCP56

CDIL

CDIL

CDIL

SOT-223 Plastic-Encapsulate Transistors

FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

PNP Silicon AF Transistors

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

PNP Plastic-Encapsulate Transistors

Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

45 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

PNP Silicon AF Transistors

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

PNP Plastic-Encapsulate Transistors

Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

-1A , -45V PNP Plastic Encapsulate Transistor

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

45 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNP Silicon Epitaxial Planar Transistor

Features ®HighCollectorCurrent ®LowCollector-emitterSaturationVoltage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC

45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

PNP Silicon AF Transistor (For AF driver and output stages High collector current)

PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

PNP Silicon AF Transistor (For AF driver and output stages High collector current)

PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

PNP medium power transistors

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

MEDIUM POWER AMPLIFIER

MEDIUMPOWERAMPLIFIER ■SILICONEPITAXIALPLANARPNP TRANSISTORS ■MINIATUREPLASTICPACKAGEFOR APPLICATIONINSURFACEMOUNTING CIRCUITS ■GENERALPURPOSEMAINLYINTENDED FORUSEINMEDIUMPOWERINDUSTRIAL APPLICATIONANDFORAUDIOAMPLIFIER OUTPUTSTAGE ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

PNP General Purpose Amplifier

PNPGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposemediumpoweramplifiersandswitchingcircuitsrequiringcollectorcurrentsto1.0A.SourcedfromProcess78.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNP Silicon AF Transistors

PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Surface mount Si-Epitaxial PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

PNP Medium Power Transistors

■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

60 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

DIODES

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

60 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

60 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

60 V, 1 A NPN medium power transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNP Transistors

Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

High Collector Current

Features •Highcollectorcurrent •1.3Wpowerdissipation.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

TRANSISTOR (PNP)

FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN)

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

Plastic-Encapsulate Transistors

FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

SOT-223 Plastic-Encapsulate Transistors

FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

BCP5产品属性

  • 类型

    描述

  • 型号

    BCP5

  • 功能描述

    两极晶体管 - BJT SOT-223 PNP GP AMP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-6-17 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEXPERIA
23+
Tube
278000
郑重承诺只做原装进口现货
PHILIPS
23+
SOT-223
7000
绝对全新原装!100%保质量特价!请放心订购!
MISTRAL
1917+
SOT223
55200
MISTRAL专营!正规代理,错过是损失!
FAIRCHILD
16+
SOT-223
5000
原装现货假一罚十
NEXPERIA/安世
23+
SOT223
200000
有挂就有货,只做原装免费送样-可BOM配单
Nexperia(安世)
23+
SOT-223-4
3727
原厂订货渠道,支持BOM配单一站式服务
NXP
2016+
SOT223
6000
只做原装,假一罚十,公司可开17%增值税发票!
NEXPERIA/安世
23+
SOT-223
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
INF
18+
SOT-223
65300
一级代理/全新现货/长期供应!
NEXPERIA
22+
NA
518000
明嘉莱只做原装正品现货

BCP5芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

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