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BCP5晶体管资料
BCP51别名：BCP51三极管、BCP51晶体管、BCP51晶体三极管
BCP51生产厂家：荷兰飞利浦公司
BCP51制作材料：Si-PNP
BCP51性质：低频或音频放大 （LF）_功率放大 （L）
BCP51封装形式：贴片封装
BCP51极限工作电压：45V
BCP51最大电流允许值：1A
BCP51最大工作频率：<1MHZ或未知
BCP51引脚数：3
BCP51最大耗散功率：1.5W
BCP51放大倍数：β=250
BCP51图片代号：H-99
BCP51vtest：45
BCP51htest：999900
- BCP51atest：1
BCP51wtest：1.5
BCP51代换 BCP51用什么型号代替：
BCP5价格
参考价格：￥0.6167
型号：BCP51 品牌：Fairchild 备注：这里有BCP5多少钱，2025年最近7天走势，今日出价，今日竞价，BCP5批发/采购报价，BCP5行情走势销售排行榜，BCP5报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits | Philips 飞利浦 |   | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | Infineon 英飞凌 | | ||
Surface mount Si-Epitaxial PlanarTransistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | | ||
PNP Medium Power Transistors ■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56 | KEXIN 科信电子 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage | SECOS 喜可士 | | ||
45 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | | |
High Collector Current Features • High collector current • 1.3 W power dissipation. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | WINNERJOIN 永而佳 | | ||
SOT-223 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | JIANGSU 长电科技 | | ||
Plastic-Encapsulate Transistors FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | HOTTECH 合科泰 | | ||
PNP Transistors Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56 | DGNJDZ 南晶电子 | | ||
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
SOT-223 Plastic-Encapsulate Transistors FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) | DGNJDZ 南晶电子 | | ||
PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56 | CDIL | | ||
SOT-223 Plastic-Encapsulate Transistors FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) | DGNJDZ 南晶电子 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | Infineon 英飞凌 | | ||
PNP Plastic-Encapsulate Transistors Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability | MCC | | ||
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits | Philips 飞利浦 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | Infineon 英飞凌 | | ||
PNP Plastic-Encapsulate Transistors Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability | MCC | | ||
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage | SECOS 喜可士 | | ||
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP Silicon Epitaxial Planar Transistor Features ® High Collector Current ® Low Collector-emitter Saturation Voltage | TECHPUBLIC 台舟电子 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M...BCP 56M(NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M...BCP 56M(NPN) | SIEMENS 西门子 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits | Philips 飞利浦 | | ||
MEDIUM POWER AMPLIFIER MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■ | STMICROELECTRONICS 意法半导体 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
PNP General Purpose Amplifier PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. | Fairchild 仙童半导体 | | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | Infineon 英飞凌 | | ||
Surface mount Si-Epitaxial PlanarTransistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | | ||
PNP Medium Power Transistors ■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56 | KEXIN 科信电子 | | ||
60 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | | |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
SOT-223 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | JIANGSU 长电科技 | | ||
High Collector Current Features • High collector current • 1.3 W power dissipation. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | WINNERJOIN 永而佳 | | ||
Plastic-Encapsulate Transistors FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | HOTTECH 合科泰 | | ||
SOT-223 Plastic-Encapsulate Transistors FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) | DGNJDZ 南晶电子 | | ||
PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56 | CDIL | | ||
60 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
60 V, 1 A NPN medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability | NEXPERIA 安世 | |
BCP5产品属性
- 类型
描述
- 型号
BCP5
- 功能描述
两极晶体管 - BJT SOT-223 PNP GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
24+ |
SOT-223 |
65300 |
一级代理/全新现货/长期供应! |
|||
Nexperia |
19+ |
SOT-223 |
36488 |
||||
NEXPERIA/安世 |
2025+ |
SOT223 |
5000 |
原装进口价格优 请找坤融电子! |
|||
恩XP |
15+ |
NA |
80 |
||||
NEXPERIA/安世 |
21+ |
SOT223 |
8080 |
只做原装,质量保证 |
|||
NEXPERIA |
24+ |
Tube |
278000 |
郑重承诺只做原装进口现货 |
|||
恩XP |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEXPERIA |
24+ |
SOT223 |
50234 |
只做原装 有挂有货 假一赔十 |
|||
Nexperia(安世) |
24+ |
SOT-223-4 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON/英飞凌 |
25+ |
SO-223 |
25000 |
代理原装现货,假一赔十 |
BCP5芯片相关品牌
BCP5规格书下载地址
BCP5参数引脚图相关
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BCP5数据表相关新闻
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