BCP51晶体管资料
BCP51别名：BCP51三极管、BCP51晶体管、BCP51晶体三极管
BCP51生产厂家：荷兰飞利浦公司
BCP51制作材料：Si-PNP
BCP51性质：低频或音频放大 （LF）_功率放大 （L）
BCP51封装形式：贴片封装
BCP51极限工作电压：45V
BCP51最大电流允许值：1A
BCP51最大工作频率：<1MHZ或未知
BCP51引脚数：3
BCP51最大耗散功率：1.5W
BCP51放大倍数：β=250
BCP51图片代号：H-99
BCP51vtest：45
BCP51htest：999900
- BCP51atest：1
BCP51wtest：1.5
BCP51代换 BCP51用什么型号代替：
BCP51价格
参考价格：￥0.6167
型号：BCP51 品牌：Fairchild 备注：这里有BCP51多少钱，2026年最近7天走势，今日出价，今日竞价，BCP51批发/采购报价，BCP51行情走势销售排行榜，BCP51报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCP51 | PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits | PHILIPS 飞利浦 |   | |
BCP51 | PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | INFINEON 英飞凌 | | |
BCP51 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56 | CDIL | | |
BCP51 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | |
BCP51 | Surface mount Si-Epitaxial PlanarTransistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | DIOTEC 德欧泰克 | | |
BCP51 | 45 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | |
BCP51 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | JIANGSU 长电科技 | | |
BCP51 | PNP Medium Power Transistors ■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56 | KEXIN 科信电子 | | |
BCP51 | -1A , -45V PNP Plastic Encapsulate Transistor FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage | SECOS 喜可士 | | |
BCP51 | PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | |
BCP51 | SOT-223 Plastic-Encapsulate Transistors FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) | DGNJDZ 南晶电子 | | |
BCP51 | PNP Transistors Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56 | DGNJDZ 南晶电子 | | |
BCP51 | TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | WINNERJOIN 永而佳 | | |
BCP51 | High Collector Current Features • High collector current • 1.3 W power dissipation. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
BCP51 | 45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | |
BCP51 | Plastic-Encapsulate Transistors FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | HOTTECH 合科泰 | | |
BCP51 | BCP51: PNP Epitaxial Silicon Transistor BCP51 该器件设计用于要求集电极电流达到1.0A的通用中等功率放大器和开关。\n 采用工艺77设计。; | ONSEMI 安森美半导体 | | |
BCP51 | 45 V, 1 A PNP medium power transistor PNP medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BCP54. • High current\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified; | NEXPERIA 安世 | | |
BCP51 | SOT-223 Package Outline Dimensions 文件：747.72 Kbytes Page：2 Pages | DGNJDZ 南晶电子 | | |
BCP51 | General Purpose Transistor | INFINEON 英飞凌 | | |
BCP51 | 封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
BCP51 | TRANSISTOR (PNP) 文件：374.8 Kbytes Page：3 Pages | FS | | |
BCP51 | 45 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | |
BCP51 | PNP Silicon AF Transistors 文件：817.94 Kbytes Page：7 Pages | INFINEON 英飞凌 | | |
BCP51 | PNP Transistors 文件：673.03 Kbytes Page：2 Pages | KEXIN 科信电子 | | |
BCP51 | SOT-223 PIastic-Encapsulate Transistors 文件：1.66704 Mbytes Page：4 Pages | LEIDITECH 雷卯电子 | | |
BCP51 | Surface Mount General Purpose Si-Epi-Planar Transistors 文件：108.22 Kbytes Page：2 Pages | DIOTEC 德欧泰克 | | |
BCP51 | PNP Silicon AF Transistors 文件：498.68 Kbytes Page：6 Pages | INFINEON 英飞凌 | | |
BCP51 | PNP General Purpose Amplifier 文件：40.26 Kbytes Page：3 Pages | FAIRCHILD 仙童半导体 | | |
丝印代码：BCP51-16；PNP Silicon Epitaxial Planar Transistor Features ® High Collector Current ® Low Collector-emitter Saturation Voltage | TECHPUBLIC 台舟电子 | | ||
丝印代码：BCP51T；45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
丝印代码：BCP51-16；PNP Silicon Epitaxial Planar Transistor Features High Collector Current Low Collector-emitter Saturation Voltage | TECHPUBLIC 台舟电子 | | ||
SOT-223 Plastic-Encapsulate Transistors FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) | DGNJDZ 南晶电子 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | INFINEON 英飞凌 | | ||
PNP Plastic-Encapsulate Transistors Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability | MCC | | ||
丝印代码：P5110T；45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits | PHILIPS 飞利浦 | | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | INFINEON 英飞凌 | | ||
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage | SECOS 喜可士 | | ||
PNP Plastic-Encapsulate Transistors Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability | MCC | | ||
45 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
丝印代码：P5116T；45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M...BCP 56M(NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M...BCP 56M(NPN) | SIEMENS 西门子 | | ||
45 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
45 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
Surface Mount General Purpose Si-Epi-Planar Transistors 文件：108.22 Kbytes Page：2 Pages | DIOTEC 德欧泰克 | | ||
PNP Silicon AF Transistors 文件：498.68 Kbytes Page：6 Pages | INFINEON 英飞凌 | | ||
PNP Silicon AF Transistors 文件：817.94 Kbytes Page：7 Pages | INFINEON 英飞凌 | | ||
45 V, 1 A PNP medium power transistors 文件：253.85 Kbytes Page：22 Pages | PHILIPS 飞利浦 | |
BCP51产品属性
- 类型
描述
- Compliance (Only Automotive supports PPAP)：
On Request*
- Product Type：
PNP
- IC (A)：
1 A
- ICM (A)：
2 A
- PD (W)：
2 W
- hFE (min)：
40 Min
- hFE(@ IC)：
0.15 A
- hFE(Min 2)：
25
- hFE(@ IC2)：
0.5 A
- VCE (SAT)Max (mV)：
500 mV
- VCE (SAT) (@ IC/IB2) (A/m A) (A/m A)：
N/A
- VCE (SAT)(Max.2)：
N/A mV
- VCE (SAT) (@ IC/IB) (A/m A)：
0.5/50
- fT (MHz)：
150 MHz
- RCE(SAT)：
N/A mΩ
- Packages：
SOT223
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT-223 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
DIODES/美台 |
25+ |
SOT-223 |
33290 |
DIODES/美台全新特价BCP51TA即刻询购立享优惠#长期有货 |
|||
DIODES |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
Nexperia |
26+ |
Modules |
100000 |
现货~进口原装|遥遥领先 |
|||
恩XP |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
NEXPERIA/安世 |
21+ |
SOT223 |
8080 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
25+ |
SO-223 |
25000 |
代理原装现货,假一赔十 |
|||
NEXPERIA |
25+ |
SOT223 |
50234 |
只做原装 有挂有货 假一赔十 |
|||
Nexperia |
19+ |
SOT-223 |
36488 |
||||
NEXPERIA |
24+ |
Tube |
278000 |
郑重承诺只做原装进口现货 |
BCP51芯片相关品牌
BCP51规格书下载地址
BCP51参数引脚图相关
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- BCP160T
- BCP160C
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- BCP149
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- BCP109
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- BCP
- BCF93C
- BCF93B
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BCP51数据表相关新闻
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DdatasheetPDF页码索引
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