位置：首页 > IC中文资料第3317页 > BCP52
BCP52晶体管资料
BCP52别名：BCP52三极管、BCP52晶体管、BCP52晶体三极管
BCP52生产厂家：荷兰飞利浦公司
BCP52制作材料：Si-PNP
BCP52性质：低频或音频放大 （LF）_功率放大 （L）
BCP52封装形式：贴片封装
BCP52极限工作电压：60V
BCP52最大电流允许值：1A
BCP52最大工作频率：<1MHZ或未知
BCP52引脚数：3
BCP52最大耗散功率：1.5W
BCP52放大倍数：β=250
BCP52图片代号：H-99
BCP52vtest：60
BCP52htest：999900
- BCP52atest：1
BCP52wtest：1.5
BCP52代换 BCP52用什么型号代替：
BCP52价格
参考价格：￥0.6203
型号：BCP52 品牌：Fairchild 备注：这里有BCP52多少钱，2025年最近7天走势，今日出价，今日竞价，BCP52批发/采购报价，BCP52行情走势销售排行榜，BCP52报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCP52 | PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits | Philips 飞利浦 |   | |
BCP52 | MEDIUM POWER AMPLIFIER MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■ | STMICROELECTRONICS 意法半导体 | | |
BCP52 | PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | |
BCP52 | PNP General Purpose Amplifier PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. | Fairchild 仙童半导体 | | |
BCP52 | PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | Infineon 英飞凌 | | |
BCP52 | Surface mount Si-Epitaxial PlanarTransistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | | |
BCP52 | PNP Medium Power Transistors ■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56 | KEXIN 科信电子 | | |
BCP52 | 60 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | |
BCP52 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | |
BCP52 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | JIANGSU 长电科技 | | |
BCP52 | High Collector Current Features • High collector current • 1.3 W power dissipation. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
BCP52 | TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | WINNERJOIN 永而佳 | | |
BCP52 | Plastic-Encapsulate Transistors FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | HOTTECH 合科泰 | | |
BCP52 | SOT-223 Plastic-Encapsulate Transistors FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) | DGNJDZ 南晶电子 | | |
BCP52 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56 | CDIL | | |
BCP52 | 60 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | |
BCP52 | 60 V, 1 A NPN medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | |
BCP52 | 60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability | NEXPERIA 安世 | | |
BCP52 | PNP Transistors Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56 | DGNJDZ 南晶电子 | | |
BCP52 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN) | JIANGSU 长电科技 | | |
BCP52 | PNP General-Purpose Amplifier 文件：134.97 Kbytes Page：6 Pages | Fairchild 仙童半导体 | | |
BCP52 | PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. | ETC 知名厂家 | ETC | |
BCP52 | 封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1.2A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
BCP52 | TRANSISTOR (PNP) 文件：374.8 Kbytes Page：3 Pages | FS | | |
BCP52 | SOT-223 PIastic-Encapsulate Transistors 文件：1.66704 Mbytes Page：4 Pages | LEIDITECH 雷卯电子 | | |
BCP52 | PNP Transistors 文件：673.03 Kbytes Page：2 Pages | KEXIN 科信电子 | | |
BCP52 | 60 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | |
BCP52 | PNP General Purpose Amplifier 文件：259.55 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | |
BCP52 | Surface Mount General Purpose Si-Epi-Planar Transistors 文件：108.22 Kbytes Page：2 Pages | Diotec 德欧泰克 | | |
BCP52 | PNP General Purpose Amplifier | ONSEMI 安森美半导体 | | |
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability | NEXPERIA 安世 | | ||
60 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | Infineon 英飞凌 | | ||
PNP Plastic-Encapsulate Transistors Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability | MCC | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications | NEXPERIA 安世 | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
60 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
LOW POWER PNP TRANSISTOR LOW POWER PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS BCP55-16 APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■ OUTPUT STAGE FOR AUDIO AMPLIFIER | STMICROELECTRONICS 意法半导体 | | ||
PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits | Philips 飞利浦 | | ||
PNP Plastic-Encapsulate Transistors Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability | MCC | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability | NEXPERIA 安世 | | ||
60 V, 1 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP Silicon Epitaxial Planar Transistor Features ® High Collector Current ® Low Collector-emitter Saturation Voltage | TECHPUBLIC 台舟电子 | | ||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN) | SIEMENS 西门子 | | ||
PNP Silicon AF Transistors PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN) | Infineon 英飞凌 | | ||
LOW POWER PNP TRANSISTOR LOW POWER PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS BCP55-16 APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■ OUTPUT STAGE FOR AUDIO AMPLIFIER | STMICROELECTRONICS 意法半导体 | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications | NEXPERIA 安世 | | ||
60 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M...BCP 56M(NPN) | SIEMENS 西门子 | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications | NEXPERIA 安世 | | ||
60 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
60 V, 1 A NPN medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
60 V, 1 A PNP medium power transistors Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified | NEXPERIA 安世 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
PNP General Purpose Amplifier 文件：259.55 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
60 V, 1 A PNP medium power transistors | ETC 知名厂家 | ETC | |
BCP52产品属性
- 类型
描述
- 型号
BCP52
- 功能描述
两极晶体管 - BJT SOT-223 PNP GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-223-4 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
NEXPERIA |
24+ |
Tube |
452000 |
郑重承诺只做原装进口现货 |
|||
DIODES(美台) |
25 |
SOT-223 |
668 |
QQ询价 绝对原装正品 |
|||
恩XP |
18+ |
NA |
4000 |
||||
CJ/长晶 |
23+ |
SOT-223 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ON |
20+ |
SMD |
11520 |
特价全新原装公司现货 |
|||
NEXPERIA |
SOT-223 |
50000 |
|||||
DIODES/美台 |
25+ |
SOT-223 |
33297 |
DIODES/美台全新特价BCP52TA即刻询购立享优惠#长期有货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
PHI |
24+ |
SOT223 |
7850 |
只做原装正品现货或订货假一赔十! |
BCP52规格书下载地址
BCP52参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BCP71M
- BCP70M
- BCP69
- BCP68
- BCP628
- BCP627
- BCP56/16
- BCP56/10
- BCP56
- BCP55TA
- BCP55M
- BCP55-C
- BCP5551
- BCP55/16
- BCP55/10
- BCP55
- BCP54TA
- BCP54M
- BCP5401
- BCP54/16
- BCP54/10
- BCP54
- BCP53TA
- BCP53T1
- BCP53T
- BCP53M
- BCP53L3
- BCP53H
- BCP5316
- BCP53/16
- BCP53/10
- BCP53
- BCP52TA
- BCP52M
- BCP5216
- BCP52/16
- BCP52/10
- BCP51TA
- BCP51M
- BCP51-C
- BCP51/16
- BCP51/10
- BCP51
- BCP49
- BCP48
- BCP4672
- BCP3906
- BCP3904
- BCP3669
- BCP313
- BCP29
- BCP28
- BCP240T
- BCP240C
- BCP238
- BCP237
- BCP211
- BCP2098
- BCP195
- BCP194
- BCP1898
- BCP1766
- BCP160T
- BCP157
- BCP149
- BCP148
- BCP147
- BCP109
- BCP108
- BCP107
- BCP
- BCF93C
BCP52数据表相关新闻
BCP51-16,
BCP51-16,
2020-8-19BCP52-16500mVSOT-223-4
BCP52-16 500mVSOT-223-4
2019-9-10BCP52-16500mVSOT-223-4
BCP52-16500mVSOT-223-4
2019-9-10BCP51-161A45V145MHz45V高端芯片热卖产品质量保证可提供样品
BCP51-16 1A 45V 145MHz 45 V高端芯片热卖产品质量保证可提供样品
2019-2-28BCP5145V145MHz1W高端芯片热卖产品质量保证可提供样品
BCP51 45V 145 MHz 1W 高端芯片热卖产品质量保证可提供样品
2019-2-28BCP52-16-500mVSOT-2231000mW高端芯片热卖产品质量保证可提供样品
BCP52-16 - 500mV SOT-223 1000 mW高端芯片热卖产品质量保证可提供样品
2019-2-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
