位置:首页 > IC中文资料第715页 > BC807-4
BC807-4价格
参考价格:¥0.0498
型号:BC807-40,215 品牌:NXP 备注:这里有BC807-4多少钱,2024年最近7天走势,今日出价,今日竞价,BC807-4批发/采购报价,BC807-4行情走势销售排行榜,BC807-4报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
PNPgeneralpurposetransistor DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817) | TRSYS Transys Electronics | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
PNPSiliconAFTransistors PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
SMALLSIGNALPNPTRANSISTORS TypeMarking BC807-255B BC807-405C ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPESAREBC817-25ANDBC817-40RESPECTIVELY APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817) | TEL TRANSYS Electronics Limited | |||
PNPGeneralPurposeAmplifier SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
GeneralPurposeTransistorPNPSilicon GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
0.3WattsPNPPlastic-EncapsulateTransistors Features Ideallysuitedforautomaticinsertion Epitaxialplanardieconstruction Forswitching,AFdriverandamplifierapplications ComplementaryNPNtypeavailable(BC817) QualifiedtoAEC-Q101standardsforhighreliability MechanicalData Case:SOT-23,Molded | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
PNPGENERALPURPOSETRANSISTORS VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
PNPGeneralPurposeAmplifier FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
TRANSISTOR(PNP) FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SmallSignalTransistors(PNP) Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc | GE GE Industrial Company | |||
TRANSISTORPNPBIPOLAR45V Features •Highcurrent •Lowvoltage •General-purposeswitchingandamplification •RoHScompliantpackage MechanicalData •Case:SOT-23Moldedplastic •Epoxy:UL94V-Orateflameretardant | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Generaldescription PNPgeneral-purposetransistors. Features Highcurrent Lowvoltage Applications General-purposeswitchingandamplification | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
Ldeallysuitedforautomaticinsertion FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817) | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Generaldescription PNPgeneral-purposetransistors. Features Highcurrent Lowvoltage Applications General-purposeswitchingandamplification | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
SiliconPNPGeneralPurposeTransistors Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
SiliconPNPGeneralPurposeTransistors Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits Threecurrentgainselections High-temperatureapplicationsupto175°C AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon | MotorolaMotorola, Inc 摩托罗拉 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNPSURFACEMOUNTTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ForSwitching,AFDriverandAmplifierApplications •ComplementaryNPNTypesAvailable(BC817-xxW) •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 达尔科技 | |||
PNPPlasticEncapsulateTransistor FEATURES •Ideallysuitedforautomaticinsertion •Epitaxialplanardieconstruction •ComplementarytoBC817W | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |
BC807-4产品属性
- 类型
描述
- 型号
BC807-4
- 功能描述
两极晶体管 - BJT Transistor 300mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
SOT-23-3 |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON(安森美) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON |
23+ |
SOT23_1 |
20000 |
全新原装假一赔十 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ON/安森美 |
22+ |
SOT-23-3 |
6000 |
只做原装,假一赔十 |
|||
ONSEMI |
23/22+ |
NA |
2000 |
全线可订货.含税开票 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ON |
22+23+ |
SOT-23 |
17092 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
23+ |
SOT-23-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
21+ |
SOT-23-3 |
8080 |
只做原装,质量保证 |
BC807-4规格书下载地址
BC807-4参数引脚图相关
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- BC817,215
- BC817
- BC8-12
- BC808W
- BC808F
- BC808A
- BC80840MTF
- BC80840
- BC808-25LT1G
- BC80825
- BC80816
- BC808
- BC807W,115
- BC807W
- BC807UE6327HTSA1
- BC807UE6327
- BC807U
- BC807S
- BC807RA
- BC807N3
- BC807K
- BC807F
- BC807DS,115
- BC807DS
- BC807B
- BC807A
- BC807-40WT1G
- BC807-40W-7
- BC807-40W.115
- BC807-40W,135
- BC807-40W,115
- BC807-40-TP
- BC80740MTF
- BC807-40LT3G
- BC807-40LT1G
- BC807-40-7-F
- BC807-40.215
- BC807-40,235
- BC807-40,215
- BC80740
- BC807-25WT1G
- BC807-25W-7
- BC807-25W,135
- BC807-25W,115
- BC807-25-TP
- BC807-25T116
- BC80725MTF
- BC807-25LT3G
- BC807-25LT1G
- BC807-25E6327
- BC807-25-7-F
- BC807-25_R1_00001
- BC807-25.215
- BC807-25,235
- BC807-25,215-CUTTAPE
- BC807-25,215
- BC80725
- BC807-16W-7
- BC807-16W,135
- BC807-16W,115
- BC807-16-TP
- BC80716
- BC807
- BC7601
- BC75-12
- BC738
- BC737
- BC728
- BC727
- BC7-12
- BC69PAS
- BC69PA
- BC68PAS
- BC68PA
- BC676A
- BC66-NA
- BC640TF
- BC640TA
- BC640G
- BC640BU
BC807-4数据表相关新闻
BC807-25LT1G
BC807-25LT1GMM3Z12VST1GBC856BLT1G1N4148TA
2023-5-30BC807G-SOT23.3R-40-TG_UTC代理商
BC807G-SOT23.3R-40-TG_UTC代理商
2023-2-2BC807-40LT1G技术参数 BC807-40LT1G批号:05+ 封装:SOT-23
BC807-40LT1G技术参数BC807-40LT1G批号:05+封装:SOT-23
2020-6-5BC807-40
BC807-40,全新原装当天发货或门市自取0755-82732291.
2019-11-19BC807-16信号晶体管全新原装
BC807-16信号晶体管全新原装
2019-11-16BC807-25W-7全新原装现货
随时可发货
2019-9-17
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80