45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits Threecurrentgainselections High-temperatureapplicationsupto175°C AEC-Q101qualified

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817)

PNPSiliconAFTransistors

PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 45V 0.5A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BC807-40H/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

GeneralPurposeTransistors

Features -EpoxymeetsUL-94V-0flammabilityrating. -MoisturesensitivityLevel1. -AEC-Q101Qualified

GeneralPurposeTransistors

Features -Epitaxialplanardieconstruction. -AEC-Q101Qualified. -Highcollectorcurrent. -Highcurrentgain. -Lowcollector-emittersaturationvoltage.