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BC807-40价格
参考价格：￥0.0498
型号：BC807-40,215 品牌：NXP 备注：这里有BC807-40多少钱，2025年最近7天走势，今日出价，今日竞价，BC807-40批发/采购报价，BC807-40行情走势销售排行榜，BC807-40报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BC807-40 | PNPgeneralpurposetransistor | ETC 知名厂家 | ETC |   |
BC807-40 | PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817) | TRSYS Transys Electronics |  | |
BC807-40 | PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODES Diodes Incorporated |  | |
BC807-40 | PNPSiliconAFTransistors PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
BC807-40 | SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | Diotec Diotec Semiconductor |  | |
BC807-40 | SMALLSIGNALPNPTRANSISTORS TypeMarking BC807-255B BC807-405C ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPESAREBC817-25ANDBC817-40RESPECTIVELY APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
BC807-40 | PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817) | TEL TRANSYS Electronics Limited |  | |
BC807-40 | PNPGeneralPurposeAmplifier SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BC807-40 | GeneralPurposeTransistorPNPSilicon GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology |  | |
BC807-40 | PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODES Diodes Incorporated | | |
BC807-40 | 0.3WattsPNPPlastic-EncapsulateTransistors Features Ideallysuitedforautomaticinsertion Epitaxialplanardieconstruction Forswitching,AFdriverandamplifierapplications ComplementaryNPNtypeavailable(BC817) QualifiedtoAEC-Q101standardsforhighreliability MechanicalData Case:SOT-23,Molded | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | |
BC807-40 | PNPGENERALPURPOSETRANSISTORS VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | |
BC807-40 | PNPGeneralPurposeAmplifier FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | |
BC807-40 | TRANSISTOR(PNP) FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | |
BC807-40 | PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | |
BC807-40 | PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 |  | |
BC807-40 | SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BC807-40 | PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
BC807-40 | SmallSignalTransistors(PNP) Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc | GE GE Industrial Company |  | |
BC807-40 | TRANSISTORPNPBIPOLAR45V Features •Highcurrent •Lowvoltage •General-purposeswitchingandamplification •RoHScompliantpackage MechanicalData •Case:SOT-23Moldedplastic •Epoxy:UL94V-Orateflameretardant | BWTECH Bruckewell Technology LTD |  | |
BC807-40 | 45V,500mAPNPgeneral-purposetransistors | ETC 知名厂家 | ETC | |
BC807-40 | 45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
BC807-40 | Ldeallysuitedforautomaticinsertion FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817) | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | |
BC807-40 | 45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BC807-40 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS PNP 45V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
BC807-40 | PNPGeneralPurposeAmplifier 文件：1.09504 Mbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
BC807-40 | Plastic-EncapsulateTransistors 文件：591.4 Kbytes Page：2 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 |  | |
BC807-40 | TRANSISTOR(PNP) 文件：1.15455 Mbytes Page：3 Pages | TGS Tiger Electronic Co.,Ltd |  | |
BC807-40 | 45V,500mAPNPgeneral-purposetransistors | ETC 知名厂家 | ETC | |
BC807-40 | 0.3Walts,PNPPlastic-EncasulateTransistor 文件：340.11 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | |
BC807-40 | GeneralPurposeTransistorsPNPSilicon 文件：902.86 Kbytes Page：10 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | |
BC807-40 | GeneralPurposeTransistors 文件：619.35 Kbytes Page：3 Pages | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 |  | |
BC807-40 | PNPSILICONGENERALPURPOSETRANSISTORS 文件：870.7 Kbytes Page：3 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | |
BC807-40 | Plastic-EncapsulateTransistors 文件：193.72 Kbytes Page：2 Pages | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 |  | |
BC807-40 | Ldeallysuitedforautomaticinsertion 文件：113.81 Kbytes Page：2 Pages | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 |  | |
BC807-40 | PNPTransistors 文件：1.38356 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
BC807-40 | PNPLowFrequencyAmplifierTransistor 文件：349.85 Kbytes Page：3 Pages | NIUHANGDongguan City Niuhang Electronics Co.LTD 纽航电子广东纽航电子科技有限公司 |  | |
BC807-40 | SurfaceMountGeneralPurpose 文件：109.24 Kbytes Page：2 Pages | Diotec Diotec Semiconductor | | |
BC807-40 | PNPSiliconAFTransistor 文件：111.91 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
BC807-40 | 0.3Watts,PNPPlastic-EncasulateTransistor 文件：153.31 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | |
BC807-40 | PNPSiliconGeneralPurposeTransistors 文件：331.19 Kbytes Page：3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
BC807-40 | PNPSURFACEMOUNTTRANSISTOR 文件：120.39 Kbytes Page：3 Pages | DIODES Diodes Incorporated | | |
BC807-40 | PNPGENERALPURPOSETRANSISTORS 文件：110.56 Kbytes Page：3 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | |
BC807-40 | GeneralPurposeTransistor 文件：343.5 Kbytes Page：4 Pages | WEITRON Weitron Technology | | |
BC807-40 | SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP) 文件：440.86 Kbytes Page：3 Pages | RECTRON Rectron Semiconductor |  | |
BC807-40 | PlasticEncapsulateTransistors 文件：427.46 Kbytes Page：2 Pages | OLITECHOlitech Electronics Co.,Ltd 奥力特电子奥力特电子科技有限公司 |  | |
45V,500mAPNPgeneral-purposetransistors | ETC 知名厂家 | ETC | | |
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODES Diodes Incorporated | | | |
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODES Diodes Incorporated | | | |
SiliconPNPGeneralPurposeTransistors Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
SiliconPNPGeneralPurposeTransistors Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits Threecurrentgainselections High-temperatureapplicationsupto175°C AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 |  | | |
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
BC807-40产品属性
- 类型
描述
- 型号
BC807-40
- 功能描述
两极晶体管 - BJT Transistor 300mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
18+ |
SOT-323 |
7200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
蓝箭 |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
PHI |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ON |
23+ |
SOT-323 |
7300 |
专注配单,只做原装进口现货 |
|||
Nexperia(安世) |
2024+ |
SOT-323 |
500000 |
诚信服务,绝对原装原盘 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
24+/25+ |
2800 |
原装正品现货库存价优 |
||||
DIODES |
24+ |
原装原封 |
25000 |
##公司100%原装现货,假一罚十!可含税13%免费提供样品支持 |
BC807-40芯片相关品牌
BC807-40规格书下载地址
BC807-40参数引脚图相关
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BC807-40数据表相关新闻
BC807-25LT1G
BC807-25LT1GMM3Z12VST1GBC856BLT1G1N4148TA
2023-5-30BC807G-SOT23.3R-40-TG_UTC代理商
BC807G-SOT23.3R-40-TG_UTC代理商
2023-2-2BC807-40LT1G技术参数 BC807-40LT1G批号：05+ 封装：SOT-23
BC807-40LT1G技术参数BC807-40LT1G批号：05+封装：SOT-23
2020-6-5BC807-40
BC807-40，全新原装当天发货或门市自取0755-82732291.
2019-11-19BC807-16信号晶体管全新原装
BC807-16信号晶体管全新原装
2019-11-16BC807-25W-7全新原装现货
随时可发货
2019-9-17
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