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BAT160价格

参考价格:¥1.7979

型号:BAT160A,115 品牌:NXP 备注:这里有BAT160多少钱,2026年最近7天走势,今日出价,今日竞价,BAT160批发/采购报价,BAT160行情走势销售排行榜,BAT160报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BAT160

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

PHILIPS

飞利浦

BAT160

Schottky barrier double diodes

ETC

知名厂家

BAT160

Schottky barrier double diodes

文件:192.04 Kbytes Page:7 Pages

PHILIPS

飞利浦

BAT160

Schottky barrier double diodes

ETC

知名厂家

Schottky barrier double diodes

ETC

知名厂家

丝印代码:AT160A;Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

NEXPERIA

安世

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

PHILIPS

飞利浦

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

PHILIPS

飞利浦

Schottky barrier double diodes

ETC

知名厂家

丝印代码:AT160C;Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

NEXPERIA

安世

Schottky barrier double diodes

Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. • Low switching losses\n• Capability of absorbing very high surge current\n• Fast recovery time\n• Guard ring protected\n• Plastic SMD package.\n• AEC-Q101 qualified;

NEXPERIA

安世

Schottky barrier double diodes

ETC

知名厂家

丝印代码:AT160S;Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

NEXPERIA

安世

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power

PHILIPS

飞利浦

Schottky barrier double diode

Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. • Low switching losses\n• Capability of absorbing very high surge current\n• Fast recovery time\n• Guard ring protected\n• Plastic SMD package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

NEXPERIA

安世

丝印代码:AT160S;Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

NEXPERIA

安世

Schottky barrier double diodes

文件:192.04 Kbytes Page:7 Pages

PHILIPS

飞利浦

Schottky barrier double diodes

文件:192.04 Kbytes Page:7 Pages

PHILIPS

飞利浦

Schottky barrier double diodes

文件:192.04 Kbytes Page:7 Pages

PHILIPS

飞利浦

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 60V SOT223 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Schottky barrier double diodes

文件:192.04 Kbytes Page:7 Pages

PHILIPS

飞利浦

Schottky barrier double diodes

文件:192.04 Kbytes Page:7 Pages

PHILIPS

飞利浦

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 60V SOT223 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

MOTOROLA

摩托罗拉

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

POWER TRANSISTORS(10A,320-380V,125W)

MOSPEC

统懋

BAT160产品属性

  • 类型

    描述

  • Package name:

    SC-73

  • Size (mm):

    6.5 x 3.5 x 1.65

  • VR [max] (V):

    60

  • IF [max] (A):

    1

  • Number of functions:

    dual

  • Configuration:

    common anode

  • IR [max] @25 C (µA):

    350

  • Cd [max] (pF):

    59.999996

  • Automotive qualified:

    Y

更新时间:2026-5-20 13:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
26+
SMD0508
86720
全新原装正品价格最实惠 假一赔百
NEXPERIA/安世
25+
NA
90000
全新原装现货
恩XP
24+
SOT-223
28235
郑重承诺只做原装进口现货
恩XP
25+
SOT223
188600
全新原厂原装正品现货 欢迎咨询
恩XP
1502+
SOT-223
2137
上传都是百分之百进口原装现货
NEXPERIA/安世
2026+
原厂原封可拆样
65258
百分百原装现货 实单必成
NEXPERIA/安世
23+
NA
5000
只有原装,欢迎来电咨询!
恩XP
24+
标准封装
7563
全新原装正品/价格优惠/质量保障
Nexperia
25+
N/A
11543
正规渠道,免费送样。支持账期,BOM一站式配齐
NEXPERIA/安世
22+
N/A
12245
现货,原厂原装假一罚十!

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