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BAS86价格
参考价格：￥0.1689
型号：BAS86,115 品牌：NXP 备注：这里有BAS86多少钱，2026年最近7天走势，今日出价，今日竞价，BAS86批发/采购报价，BAS86行情走势销售排行榜，BAS86报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BAS86 | Small-Signal Diode Schottky Diode Features ♦ For general purpose applications. ♦ This diode features low turn-on voltage. This device are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ♦ Metal-on-silicon Schottky barrier device which is protected by a PN junction gu | GOOD-ARK 固锝电子 |   | |
BAS86 | SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER DIODE Ultra High-Speed Switching, Voltage Clamping Protection Circuits and Blocking Applications Features • Low forward voltage. • Guard ring protected. • Hermetically-sealed leaded glass package. • High breakdown voltage. | SEMTECH_ELEC 先之科半导体 | | |
BAS86 | 0.2A Surface-mount Small-signal Schottky Diode PRODUCT SUMMARY Voltage range 50 Volts Popular small Mini-MELF package Dissipation 200mW at TA = 25°C FEATURES For general-purpose applications. This diode features low turn-on voltage. This Schottky barrier device is protected by a PN junction guard ring against excessive volta | SSC Silicon Standard Corp. | | |
BAS86 | Schottky barrier diode DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it ca | PHILIPS 飞利浦 | | |
BAS86 | Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on-silicon Schottky barrier device which is protected by a PN junctio | VISHAYVishay Siliconix 威世威世科技公司 | | |
BAS86 | 200mW Small Signal Schottky Barrier Diodes 50 Volts Features • Moisture Sensitivity Level 1 • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a DO-35 case with type designation BAT86 • Lead Free Finish/R | MCC | | |
BAS86 | SCHOTTKY BARRIER DIODE FEATURES : • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on-silicon Schottky barrier device which is protected by a PN junct | EIC | | |
BAS86 | Small Signal Schottky Diode VOLTAGE RANGE: 50 V CURRENT: 0.2 A Features ● For general purpose applications ● This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges | LUGUANG 鲁光电子 | | |
BAS86 | SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 50 V CURRENT: 0.2 A FEATURES ◇ For general purpose applications ◇ This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges | DSK | | |
BAS86 | Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VISHAYVishay Siliconix 威世威世科技公司 | | |
BAS86 | Schottky barrier single diode 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device (SMD) package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such | NEXPERIA 安世 | | |
BAS86 | SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 50 V CURRENT: 0.2 A FEATURES ◇ For general purpose applications ◇ This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges | BILIN 银河微电 | | |
BAS86 | 200mA Surface Mount Schottky Barrier Diode Features ● For general purpose applications ● This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ● Metal-on-silicon Schottky barrier device which is protected by a PN junctio | SUNMATE 森美特 | | |
BAS86 | 0.2A 60V Schottky diode 文件：421.496 Kbytes Page：2 Pages | | ||
BAS86 | Small Signal Schottky Diode 文件：113.84 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
BAS86 | Schottky barrier single diode | NEXPERIA 安世 | | |
BAS86 | Small Signal Schottky Diode 文件：62.39 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
BAS86 | Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
BAS86 | SCHOTTKY DIODES 文件：39.52 Kbytes Page：1 Pages | RECTRON 丽正国际 | | |
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • T | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky barrier diode 文件：56.03 Kbytes Page：8 Pages | PHILIPS 飞利浦 | | ||
Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Small Signal Schottky Diode 文件：113.84 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Small Signal Schottky Diode 文件：62.39 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Small-Signal Diode Schottky Diode 文件：60.96 Kbytes Page：2 Pages | GOOD-ARK 固锝电子 | | ||
Schottky barrier single diode 文件：156.88 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 50V 200MA SOD80 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 50V 200MA SOD80 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Small Signal Schottky Diode | VISHAYVishay Siliconix 威世威世科技公司 | |
BAS86产品属性
- 类型
描述
- 型号
BAS86
- 制造商
NXP Semiconductors
- 功能描述
DIODE SCHOTTKY SOD-80
- 制造商
NXP Semiconductors
- 功能描述
DIODE, SCHOTTKY, SOD-80
- 制造商
NXP Semiconductors
- 功能描述
Schottky Barrier Diode,50V,200mA,BAS86
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
|||
ROHM/罗姆 |
24+ |
QFN |
9918 |
公司现货库存,支持实单 |
|||
NEXPERIA |
18+ |
LL34 |
50000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PHI |
2026+ |
LL34 |
2500 |
原装正品,假一罚十! |
|||
恩XP |
24+ |
N/A |
6000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
恩XP |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
PHIL |
25+ |
238 |
公司优势库存 热卖中! |
||||
恩XP |
23+ |
9865 |
原装正品,假一赔十 |
||||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
恩XP |
22+ |
LL34 |
8000 |
原装正品支持实单 |
BAS86规格书下载地址
BAS86参数引脚图相关
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BAS40E6327 製造商: Infineon 產品類型: 肖特基二極體及整流器 RoHS: 詳細資料 產品: Schottky Diodes 安裝風格: SMD/SMT 封裝/外殼: SOT-23-3 配置: Single 技術: Si If - 順向電流: 120 mA Vf - 順向電壓: 1 V Ifsm - 順向浪湧電流: 200 mA Ir - 反向電流: 1 uA 最低工作溫度: - 55 C 最高工
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2019-3-22
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