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BAS86价格
参考价格：￥0.1689
型号：BAS86,115 品牌：NXP 备注：这里有BAS86多少钱，2025年最近7天走势，今日出价，今日竞价，BAS86批发/采购报价，BAS86行情走势销售排行榜，BAS86报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BAS86 | Small-Signal Diode Schottky Diode Features ♦ For general purpose applications. ♦ This diode features low turn-on voltage. This device are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ♦ Metal-on-silicon Schottky barrier device which is protected by a PN junction gu | Good-Ark |   | |
BAS86 | SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER DIODE Ultra High-Speed Switching, Voltage Clamping Protection Circuits and Blocking Applications Features • Low forward voltage. • Guard ring protected. • Hermetically-sealed leaded glass package. • High breakdown voltage. | SEMTECH_ELEC 先之科半导体 | | |
BAS86 | 0.2A Surface-mount Small-signal Schottky Diode PRODUCT SUMMARY Voltage range 50 Volts Popular small Mini-MELF package Dissipation 200mW at TA = 25°C FEATURES For general-purpose applications. This diode features low turn-on voltage. This Schottky barrier device is protected by a PN junction guard ring against excessive volta | SSC Silicon Standard Corp. | | |
BAS86 | Schottky barrier diode DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it ca | Philips 飞利浦 | | |
BAS86 | Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on-silicon Schottky barrier device which is protected by a PN junctio | VishayVishay Siliconix 威世科技威世科技半导体 | | |
BAS86 | 200mW Small Signal Schottky Barrier Diodes 50 Volts Features • Moisture Sensitivity Level 1 • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a DO-35 case with type designation BAT86 • Lead Free Finish/R | MCC 美微科 | | |
BAS86 | 200mA Surface Mount Schottky Barrier Diode Features ● For general purpose applications ● This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ● Metal-on-silicon Schottky barrier device which is protected by a PN junctio | SUNMATE 森美特 | | |
BAS86 | SCHOTTKY BARRIER DIODE FEATURES : • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on-silicon Schottky barrier device which is protected by a PN junct | EIC | | |
BAS86 | Small Signal Schottky Diode VOLTAGE RANGE: 50 V CURRENT: 0.2 A Features ● For general purpose applications ● This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges | LUGUANG 鲁光电子 | | |
BAS86 | SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 50 V CURRENT: 0.2 A FEATURES ◇ For general purpose applications ◇ This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges | DSK | | |
BAS86 | Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VishayVishay Siliconix 威世科技威世科技半导体 | | |
BAS86 | Schottky barrier single diode 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device (SMD) package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BAS86 | SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 50 V CURRENT: 0.2 A FEATURES ◇ For general purpose applications ◇ This diode features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges | BILIN 银河微电 | | |
BAS86 | 0.2A 60V Schottky diode 文件：421.496 Kbytes Page：2 Pages | | ||
BAS86 | Small Signal Schottky Diode 文件：113.84 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
BAS86 | Small Signal Schottky Diode 文件：62.39 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
BAS86 | Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
BAS86 | SCHOTTKY DIODES 文件：39.52 Kbytes Page：1 Pages | RECTRON 丽正国际 | | |
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • T | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Schottky barrier diode 文件：56.03 Kbytes Page：8 Pages | Philips 飞利浦 | | ||
Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Small Signal Schottky Diode 文件：113.84 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Small Signal Schottky Diode 文件：62.39 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Small-Signal Diode Schottky Diode 文件：60.96 Kbytes Page：2 Pages | Good-Ark | | ||
Schottky barrier single diode 文件：156.88 Kbytes Page：9 Pages | Philips 飞利浦 | | ||
Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 50V 200MA SOD80 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Small Signal Schottky Diode 文件：231.08 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 50V 200MA SOD80 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
BAS86产品属性
- 类型
描述
- 型号
BAS86
- 制造商
NXP Semiconductors
- 功能描述
DIODE SCHOTTKY SOD-80
- 制造商
NXP Semiconductors
- 功能描述
DIODE, SCHOTTKY, SOD-80
- 制造商
NXP Semiconductors
- 功能描述
Schottky Barrier Diode,50V,200mA,BAS86
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
恩XP |
24+ |
1206 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
24+ |
SOD80 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEXPERIA/安世 |
23+ |
NA |
5000 |
只有原装,欢迎来电咨询! |
|||
VISHAY |
22+ |
LL34SOD80 |
8000 |
原装正品支持实单 |
|||
恩XP |
1701+ |
SOD-80C |
7500 |
LLDS |
|||
恩XP |
23+ |
N/A |
6000 |
公司只做原装，可来电咨询 |
|||
恩XP |
24+ |
N/A |
6000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
GENERALSEMICONDUCTOR |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
NEXPERIA/安世 |
23+ |
SOD-80CLLDS |
7000 |
BAS86规格书下载地址
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