Features

• For general purpose applications

• This diode features low turn-on voltage.

   The devices are protected by a PN

   junction guard ring against excessive

   voltage, such as electrostatic discharges.

• Metal-on-silicon Schottky barrier device

   which is protected by a PN junction guard ring.

• The low forward voltage drop and fast switching

   make it ideal for protection of MOS devices,

   steering, biasing and coupling diodes for fast

   switching and low logic level applications

• This diode is also available in a DO-35 case with

   type designation BAT86.

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications

• Applications where a very low forward voltage is required