Features

♦ For general purpose applications.

♦ This diode features low turn-on voltage. This device are

protected by a PN junction guard ring against excessive

voltage, such as electrostatic discharges

♦ Metal-on-silicon Schottky barrier device which is protected by a

PN junction guard ring.

♦ The low forward voltage drop and fast switching make it ideal

for protection of MOS devices, steering, biasing and coupling

diodes for fast switching and low logic level applications.

♦ This diode is also available in the DO-35 case with type designation BAT86.