Features

● For general purpose applications

● This diode features low turn-on voltage.

The devices are protected by a PN junction

guard ring against excessive voltage, such

as electrostatic discharges.

● Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring.

● The low forward voltage drop and fast switching

make it ideal for protection of MOS devices, steer

ing, biasing and coupling diodes for fast switching

and low logic level applications

● Lead (Pb)-free component

● Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC