FEATURES

• For general purpose applications

• This diode features low turn-on voltage. The

devices are protected by a PN junction guard

ring against excessive voltage, such as

electrostatic discharges

• Metal-on-silicon Schottky barrier device which

is protected by a PN junction guard ring

• The low forward voltage drop and fast switching make it

ideal for protection of MOS devices, steering, biasing and

coupling diodes for fast switching and low logic level

applications

• This diode is also available in a DO-35 case with type

designation BAT86

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Applications where a very low forward voltage is required