Monolithic IGs

Monolithic IGs ICs for Audio Applications • CD Amplifiers • Low-Frequency, Small-Signal Amplifiers

SEMICONDUCTORS

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Dual operational amplifier with switch, for audio use (3 inputs 횞 1 output 횞 2)

The BA3131FS contains two built-in circuits with operational amplifiers configured of three differential input circuits, an output circuit, and a switch circuit. The three differential input circuits are separate, enabling independent settings to be entered for the gain and frequency characteristi

Dual operational amplifier with switch, for audio use (3 inputs 횞 1 output 횞 2)

The BA3131FS contains two built-in circuits with operational amplifiers configured of three differential input circuits, an output circuit, and a switch circuit. The three differential input circuits are separate, enabling independent settings to be entered for the gain and frequency characteristi

带3输入选择器的音频放大器

BA3131FS内置有2个由3系统的差动输入电路、单系统的输出电路构成的带开关的音频放大器。可独立控制3系统的差动输入电路，可自由设定增益和频率特性。

Silicon Monolithic Integrated Circuit

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3 Dual operational amplifier with switch for car audio systems

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Silicon Monolithic Integrated Circuit

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OP Amp. with 3 Inputs Selector

-20 P-Channel MOSFET

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

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Reference Diode

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Integrated Circuit Preamp w/ALC