1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

This Schottky Barrier Rectifier is designed to meet the general requirements of commercial & automotive applications. •Guard Ring Die Construction for Transient Protection\n•Ideally Suited for Automated Assembly\n•Low Power Loss, High Efficiency\n•Surge Overload Rating to 30A Peak\n•For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application\n•Lead-Free Finish; RoHS Complian;

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 1A SMB 分立半导体产品 二极管 - 整流器 - 单

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)