SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ Built-in

1A 60V Schottky diode

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Schottky 

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

丝印代码：B1XXAE；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

丝印代码：B1XXAF；1.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

封装/外壳：DO-214AC，SMA 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 1A SMA 分立半导体产品 二极管 - 整流器 - 单

1.0A SCHOTTKY BARRIER RECTIFIER

封装/外壳：DO-221AC，SMA 扁平引线 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 1A SMAF 分立半导体产品 二极管 - 整流器 - 单

1A Trench Schottky Barrier Rectifier SMA

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

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The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

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DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

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The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)