Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

汽车 Q101 30V 双 N 通道和 P 通道 HEXFET Power MOSFET，采用 SO-8 封装

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9952 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9952 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

Power MOSFET(Vdss=-30V)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa

TV ENCODER

GENERAL DESCRIPTION The W9952QP digital video encoder converts YCbCr (4:2:2) 8-bit data into analog composite video and Y/C video signals. It accepts ITU-601/656 or square pixel input formats, and the output video is formatted to be compatible with 525-line (M) NTSC/PAL or 625-

TV ENCODER

GENERAL DESCRIPTION The W9952QP digital video encoder converts YCbCr (4:2:2) 8-bit data into analog composite video and Y/C video signals. It accepts ITU-601/656 or square pixel input formats, and the output video is formatted to be compatible with 525-line (M) NTSC/PAL or 625-