Power MOSFET(Vdss=-30V)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

采用 SO-8 封装的 30V 双 N 通道和 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道和 P 通道 MOSFET;

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

Advanced Process Technology

Description These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

Advanced Process Technology

Description These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

ULTRA LOW ON RESISTANCE

文件：229.77 Kbytes Page：10 Pages

ULTRA LOW ON RESISTANCE

文件：229.77 Kbytes Page：10 Pages

HEXFETPOWERMOSFET

HEXFETPOWERMOSFET

文件：269.52 Kbytes Page：10 Pages

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9952 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9952 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa

TV ENCODER

GENERAL DESCRIPTION The W9952QP digital video encoder converts YCbCr (4:2:2) 8-bit data into analog composite video and Y/C video signals. It accepts ITU-601/656 or square pixel input formats, and the output video is formatted to be compatible with 525-line (M) NTSC/PAL or 625-

TV ENCODER

GENERAL DESCRIPTION The W9952QP digital video encoder converts YCbCr (4:2:2) 8-bit data into analog composite video and Y/C video signals. It accepts ITU-601/656 or square pixel input formats, and the output video is formatted to be compatible with 525-line (M) NTSC/PAL or 625-