Power MOSFET(Vdss=-30V)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

采用 SO-8 封装的 30V 双 N 通道和 P 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

Advanced Process Technology

Description These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

Advanced Process Technology

Description These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

ULTRA LOW ON RESISTANCE

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ULTRA LOW ON RESISTANCE

文件：229.77 Kbytes Page：10 Pages

HEXFETPOWERMOSFET

HEXFETPOWERMOSFET

文件：269.52 Kbytes Page：10 Pages

Electronic, 2 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 2 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9952 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9952 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9952 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9952 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

3MTM Single Coated Medical Plastic Tape

文件：48.26 Kbytes Page：2 Pages

400 MSPS 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

文件：569.1 Kbytes Page：28 Pages