位置:首页 > IC中文资料第236页 > AT49BV040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT49BV040 | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | ||
AT49BV040 | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | ||
AT49BV040 | IC FLASH 4M PARALLEL 32PLCC | Microchip 微芯科技 | ||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Flash Memory Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Flash Memory Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Flash Memory Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Flash Memory Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
封装/外壳:32-LCC(J 形引线) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32PLCC 集成电路(IC) 存储器 | Microchip 微芯科技 | |||
封装/外壳:32-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32TSOP 集成电路(IC) 存储器 | Microchip 微芯科技 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory | Microchip 微芯科技 | |||
4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory | Microchip 微芯科技 |
AT49BV040产品属性
- 类型
描述
- 型号
AT49BV040
- 制造商
Atmel Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL |
2023+ |
TSSOP |
50000 |
原装现货 |
|||
ATMEL |
2016+ |
TSOP32 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ATMEL |
23+ |
TSOP32 |
20000 |
全新原装假一赔十 |
|||
ATMEL/爱特梅尔 |
25+ |
PLCC |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ATMEL/爱特梅尔 |
22+ |
PLCC32 |
100000 |
代理渠道/只做原装/可含税 |
|||
ATMEL/爱特梅尔 |
23+ |
TSSOP-32 |
50000 |
原装正品支持实单 |
|||
MICROCHIP/微芯 |
25+ |
TSOP32 |
32360 |
MICROCHIP/微芯全新特价AT49BV040B-TU即刻询购立享优惠#长期有货 |
|||
ATMEL/爱特梅尔 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ATMEL |
25+ |
SOP |
3758 |
||||
Atmel(爱特梅尔) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
AT49BV040芯片相关品牌
AT49BV040规格书下载地址
AT49BV040参数引脚图相关
- bf419
- BDM
- bcm2727
- bcm
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- AT512C
- AT512
- AT-510
- AT-51
- AT50B5
- AT50B10
- AT509
- AT508
- AT507
- AT506M
- AT-506
- AT-505
- AT505
- AT504M
- AT50355
- AT50305
- AT50304
- AT-503
- AT503
- AT501
- AT49BV040-90JI
- AT49BV040-90JC
- AT49BV040-20VI
- AT49BV040-20VC
- AT49BV040-20TI
- AT49BV040-20TC
- AT49BV040-20JI
- AT49BV040-15VC
- AT49BV040-15TI
- AT49BV040-15TC
- AT49BV040-15JI
- AT49BV040-15JC
- AT49BV040-15CI
- AT49BV040-15CC
- AT49BV040-12VI
- AT49BV040-12VC
- AT49BV040-12TI
- AT49BV040-12TC
- AT49BV040-12JI
- AT49BV04012JC
- AT49BV020-90TI
- AT49BV020-90TC
- AT49BV020-90JI
- AT49BV020-90JC
- AT49BV020-70VI
- AT49BV020-70VC
- AT49BV020-70TI
- AT49BV020-70TC
- AT49BV020-70JI
- AT49BV020-70JC
- AT49BV010-15TI
- AT49BV010-15TC
- AT49BV010-15JI
- AT49BV010-15JC
- AT49BV010-12VI
- AT49BV010-12VC
- AT49BV010-12TI
- AT49BV010-12TC
- AT49BV010-12JI
- AT49BV010-12JC
- AT499
- AT498
- AT497
- AT496
- AT495
- AT494
- AT48810
- AT48802
- AT48801
- AT488
- AT487
- AT486
- AT485
- AT484
- AT480
- AT477
- AT476
- AT475
- AT469
- AT468
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AT45DB642D-CNU百度百科AT45DB642D-CNU技术支持 规格下载存储容量 64Mb
2019-4-19AT56270-4Z
AT56270-4Z 深圳市拓亿芯电子有限公司,本公司具备一般纳税人,可开16点增值税票, 货源渠道保证原厂原装正品IC,诚信为本,薄利多销。
2019-3-7AT56C25-6H
AT56C25-6H 深圳市拓亿芯电子有限公司,本公司具备一般纳税人,可开16点增值税票, 货源渠道保证原厂原装正品IC,诚信为本,薄利多销。
2019-3-7
DdatasheetPDF页码索引
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