型号 功能描述 生产厂家 企业 LOGO 操作
AT49BV040

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

AT49BV040

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

AT49BV040

IC FLASH 4M PARALLEL 32PLCC

Microchip

微芯科技

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

封装/外壳:32-LCC(J 形引线) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32PLCC 集成电路(IC) 存储器

Microchip

微芯科技

封装/外壳:32-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32TSOP 集成电路(IC) 存储器

Microchip

微芯科技

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Microchip

微芯科技

4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Microchip

微芯科技

AT49BV040产品属性

  • 类型

    描述

  • 型号

    AT49BV040

  • 制造商

    Atmel Corporation

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ATMEL/爱特梅尔
25+
TSOP-32
378
原装正品,欢迎来电咨询!
ATMEL/爱特梅尔
23+
TSSOP-32
6000
正规渠道,只有原装!
Microchip Technology
21+
32-LCC(J 形引线)
1868
100%进口原装!长期供应!绝对优势价格(诚信经营
ATMEL/爱特梅尔
25+
TSOP-32
15000
全新原装现货,假一赔十.
ATMEL
25+
10
全新原装!优势库存热卖中!
MICROCHIP/微芯
25+
TSOP32
32360
MICROCHIP/微芯全新特价AT49BV040B-TU即刻询购立享优惠#长期有货
ATMEL
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
ATMEL/爱特梅尔
22+
TSOP-32
12245
现货,原厂原装假一罚十!
Atmel(爱特梅尔)
24+
N/A
9077
原厂可订货,技术支持,直接渠道。可签保供合同
atmel
0733+
plcc
23
只做原装正品假一赔十为客户做到零风险!!

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