型号 功能描述 生产厂家 企业 LOGO 操作
AT49BV040

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

AT49BV040

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

AT49BV040

IC FLASH 4M PARALLEL 32PLCC

Microchip

微芯科技

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

Atmel

爱特梅尔

封装/外壳:32-LCC(J 形引线) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32PLCC 集成电路(IC) 存储器

Microchip

微芯科技

封装/外壳:32-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32TSOP 集成电路(IC) 存储器

Microchip

微芯科技

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Microchip

微芯科技

4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Microchip

微芯科技

AT49BV040产品属性

  • 类型

    描述

  • 型号

    AT49BV040

  • 制造商

    Atmel Corporation

更新时间:2025-11-2 14:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ATMEL
24+
QFN
30000
专业代理ATMEL全系列产品全新进口原装
ATMEL
24+
10
ATMEL
08+
PLCC
10
进口原装公司现货
ATMEL/爱特梅尔
0523+
PLCC32
621
原装现货
Atmel(爱特梅尔)
24+
N/A
9077
原厂可订货,技术支持,直接渠道。可签保供合同
MICROCHIP/微芯
25+
TSOP32
32360
MICROCHIP/微芯全新特价AT49BV040B-TU即刻询购立享优惠#长期有货
Atmel
23+
32-TSOP
65600
ATMEL
22+
TSSOP32
8200
全新原装现货!自家库存!
ATMEL
22+
TSSOP
8000
原装正品支持实单
ATMEL
23+
TSOP32
12800
公司只有原装 欢迎来电咨询。

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